Bernal Institute and Department of Chemical Sciences, University of Limerick, Ireland.
Chem Commun (Camb). 2018 May 31;54(45):5728-5731. doi: 10.1039/c8cc03075h.
Herein, we report the formation of silicon, germanium and more complex Si-SixGe1-x and Si-Ge axial 1D heterostructures, at low temperatures in solution. These nanorods/nanowires are grown using phenylated compounds of silicon and germanium as reagents, with precursor decomposition achieved at substantially reduced temperatures (200 °C for single crystal nanostructures and 300 °C for heterostructures), through the addition of a reducing agent. This low energy route for the production of these functional nanostructures as a wet chemical in high yield is attractive to meet the processing needs for next generation photovoltaics, batteries and electronics.
在此,我们报告了在低温溶液中形成硅、锗以及更复杂的 Si-SixGe1-x 和 Si-Ge 轴向 1D 异质结构的过程。这些纳米棒/纳米线是使用硅和锗的苯化化合物作为试剂生长的,通过添加还原剂,在大大降低的温度(单晶纳米结构为 200°C,异质结构为 300°C)下实现前体分解。这种通过湿化学法高产率生产这些功能性纳米结构的低能耗方法,对于满足下一代光伏、电池和电子器件的加工需求具有吸引力。