Hedley Gordon J, Quarti Claudio, Harwell Jonathon, Prezhdo Oleg V, Beljonne David, Samuel Ifor D W
Organic Semiconductor Centre, SUPA, School of Physics and Astronomy, University of St Andrews, North Haugh, St Andrews, Fife, KY16 9SS, UK.
Laboratory for Chemistry of Novel Materials, Department of Chemistry, Université de Mons, Place du Parc 20, 7000, Mons, Belgium.
Sci Rep. 2018 May 25;8(1):8115. doi: 10.1038/s41598-018-26207-9.
Understanding the initial ultrafast excited state dynamics of methylammonium lead iodide (MAPI) perovskite is of vital importance to enable its fullest utilisation in optoelectronic devices and the design of improved materials. Here we have combined advanced measurements of the ultrafast photoluminescence from MAPI films up to 0.6 eV above the relaxed excited state with cutting-edge advanced non-adiabatic quantum dynamics simulations, to provide a powerful unique insight into the earliest time behaviour in MAPI. Our joint experimental-theoretical approach highlights that the cooling of holes from deep in the valence band to the valence band edge is fast, occurring on a 100-500 fs timescale. Cooling of electrons from high in the conduction band to the conduction band edge, however, is much slower, on the order of 1-10 ps. Density of states calculations indicate that excited states with holes deep in the valence band are greatly favoured upon photoexcitation, and this matches well with the fast (100-500 fs) formation time for the relaxed excited state observed in our ultrafast PL measurements. Consequently we are able to provide a complete observation of the initial excited state evolution in this important prototypical material.
了解甲基碘化铅(MAPI)钙钛矿的初始超快激发态动力学对于其在光电器件中的充分利用以及改进材料的设计至关重要。在此,我们将对MAPI薄膜在高于弛豫激发态0.6 eV以下的超快光致发光的先进测量与前沿的非绝热量子动力学模拟相结合,以深入了解MAPI中最早时刻的行为。我们的联合实验 - 理论方法表明,空穴从价带深处冷却到价带边缘的速度很快,发生在100 - 500 fs的时间尺度上。然而,电子从导带高处冷却到导带边缘的速度要慢得多,约为1 - 10 ps。态密度计算表明,光激发时价带深处有空穴的激发态受到极大青睐,这与我们超快光致发光测量中观察到弛豫激发态的快速(100 - 500 fs)形成时间非常吻合。因此,我们能够完整地观察这种重要原型材料中的初始激发态演化。