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基于无机 p 型半导体材料的光电探测器。

Photoelectric Detectors Based on Inorganic p-Type Semiconductor Materials.

机构信息

Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China.

出版信息

Adv Mater. 2018 Aug;30(35):e1706262. doi: 10.1002/adma.201706262. Epub 2018 Jun 10.

Abstract

Photoelectric detectors are the central part of modern photodetection systems with numerous commercial and scientific applications. p-Type semiconductor materials play important roles in optoelectronic devices. Photodetectors based on p-type semiconductor materials have attracted a great deal of attention in recent years because of their unique properties. Here, a comprehensive summary of the recent progress mainly on photodetectors based on inorganic p-type semiconductor materials is presented. Various structures, including photoconductors, phototransistors, homojunctions, heterojunctions, p-i-n junctions, and metal-semiconductor junctions of photodetectors based on inorganic p-type semiconductor materials, are discussed and summarized. Perspectives and an outlook, highlighting the promising future directions of this research field, are also given.

摘要

光电探测器是现代光电探测系统的核心部分,具有众多商业和科学应用。p 型半导体材料在光电设备中起着重要作用。近年来,基于 p 型半导体材料的光电探测器因其独特的性质而引起了广泛关注。本文主要对基于无机 p 型半导体材料的光电探测器的最新进展进行了全面总结。讨论和总结了基于无机 p 型半导体材料的光电探测器的各种结构,包括光电导体、光电晶体管、同质结、异质结、p-i-n 结和金属-半导体结。还给出了该研究领域的展望和前景,强调了该领域有前途的未来发展方向。

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