Division of Industrial Metrology, Korea Research Institute of Standards and Science (KRISS), 267 Gajeong-ro, Yuseong-gu, Daejeon 34113, South Korea; Major of Nano Science, University of Science and Technology, 217 Gajeong-ro, Yuseong-gu, Daejeon 34113, South Korea.
Division of Industrial Metrology, Korea Research Institute of Standards and Science (KRISS), 267 Gajeong-ro, Yuseong-gu, Daejeon 34113, South Korea.
Ultramicroscopy. 2018 Sep;192:50-56. doi: 10.1016/j.ultramic.2018.05.002. Epub 2018 May 11.
A gas field ion source (GFIS) has many advantages that are suitable for ion microscope sources, such as high brightness and a small virtual source size, among others. In order to apply a tip-based GFIS to an ion microscope, it is better to create a trimer/single atom tip (TSAT), where the ion beam must be generated in several atoms of the tip apex. Here, unlike the conventional method which uses tip heating or a reactive gas, we show that the tip surface can be cleaned using only the field evaporation phenomenon and that the TSAT can also be fabricated using an insulating layer containing tungsten oxide, which remains after electrochemical etching. Using this method, we could get TSAT over 90% of yield.
气体场离子源 (GFIS) 具有许多优点，非常适合离子显微镜的离子源，例如高亮度和小的虚源尺寸等。为了将基于尖端的 GFIS 应用于离子显微镜，最好创建三聚体/单原子尖端 (TSAT)，其中离子束必须在尖端顶点的几个原子中产生。在这里，与使用尖端加热或反应性气体的传统方法不同，我们表明仅使用场蒸发现象就可以清洁尖端表面，并且也可以使用含有氧化钨的绝缘层来制造 TSAT，该氧化钨在电化学蚀刻后仍然存在。使用这种方法，我们可以获得超过 90%的 TSAT 产量。
