Institute for Technical Physics and Materials Science, Centre for Energy Research , Hungarian Academy of Sciences , Konkoly Thege M. út 29-33 , H-1121 Budapest , Hungary.
ACS Appl Mater Interfaces. 2018 Jul 5;10(26):22851-22856. doi: 10.1021/acsami.8b06425. Epub 2018 Jun 22.
Recently, we have shown that the protecting layer of nanosize can be produced by means of ion beam mixing (IBM) of a Si/C multilayer system. The corrosion resistance of the layer correlated with the SiC amount and distribution, determined by Auger electron spectroscopy depth profiling. It has also been shown that the IBM of the Si/C system can be well described by TRIDYN simulation. By combining these two findings, it is possible to design protective layers for various arrangements of layer structure and irradiation conditions. Three different multilayer structures (with individual layer thicknesses falling in the range of 10-20 nm) have been irradiated by Ar and Xe ions at room temperature in the energy and fluence ranges of 40-120 keV and 0.25 × 10 to 6 × 10 ion/cm, respectively. The carbon and silicon depth distributions have been calculated by TRIDYN simulation. From these profiles applying a simple rule for compound formation, the SiC in-depth distributions were calculated. The resulting corrosion resistance has been measured by potentiodynamic corrosion test in 4 M KOH solution. Excellent correlation between these results and the in-depth distribution (calculated by TRIDYN simulation) of SiC has been found. Thus, the design of a protective SiC coatings operating in harsh environments is possible by applying fast and cheap simulation techniques.
最近，我们已经证明，通过 Si/C 多层系统的离子束混合（IBM）可以产生纳米尺寸的保护层。通过俄歇电子能谱深度剖析确定的保护层的耐腐蚀性与 SiC 的量和分布相关。此外，还表明 Si/C 系统的 IBM 可以通过 TRIDYN 模拟很好地描述。通过将这两个发现结合起来，可以为各种层结构和辐照条件设计保护层。在室温下，三种不同的多层结构（每个层的厚度在 10-20nm 范围内）分别用 Ar 和 Xe 离子在 40-120keV 和 0.25×10 到 6×10 离子/cm 的能量和通量范围内辐照。通过 TRIDYN 模拟计算了碳和硅的深度分布。根据这些分布，应用化合物形成的简单规则，计算了 SiC 的深度分布。通过在 4M KOH 溶液中的动电位腐蚀测试测量了由此产生的耐腐蚀性。已经发现这些结果与 SiC 的深度分布（通过 TRIDYN 模拟计算）之间存在极好的相关性。因此，可以通过应用快速且廉价的模拟技术来设计在恶劣环境中运行的保护性 SiC 涂层。
