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操控电场强度分布以有效增强荧光纳米金刚石的空间和光谱荧光强度。

Manipulating the distribution of electric field intensity to effectively enhance the spatial and spectral fluorescence intensity of fluorescent nanodiamonds.

机构信息

Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei, 10617, Taiwan.

出版信息

Nanoscale. 2018 Sep 27;10(37):17576-17584. doi: 10.1039/c8nr01403e.

DOI:10.1039/c8nr01403e
PMID:29901683
Abstract

Fluorescent nanodiamonds (FNDs) having nitrogen-vacancy (NV) centers have drawn much attention for their biocompatibility and stable optical properties. Nevertheless, the NV centers are located in the interior of the FNDs, and it has not been possible to increase the fluorescence intensity of FNDs efficiently using previously developed enhancement methods. In this paper, we present a simple nanocavity structure that enhances the fluorescence intensity of FNDs. The designed Al/SiO2 nanocavities are stable and inexpensive, and provide a large region for efficient enhancement of fluorescence that can cover most 100 nm FNDs. By tuning the thickness of the capping SiO2 layer of the Al/SiO2 nanocavities, the distributions of both the spatial and spectral electric field intensities of the FNDs could be controlled and manipulated. In general, the FNDs were excited using a green-yellow laser; the broadband fluorescence of the FNDs comprised the emissions from neutral (NV0) and negatively charged (NV-) NV centers. To enhance the fluorescence intensity from the NV- centers of the FNDs, we designed an Al/70 nm SiO2 nanocavity to function at excitation and emission wavelengths of 633 and 710 nm, respectively, allowing the NV- centers to be excited efficiently; as a result, we achieved an enhancement in fluorescence intensity of 11.2-fold. Moreover, even when we covered 100 nm FNDs with polyglycerol (forming p-FND), the fluorescence intensities of the p-FND particles placed on the nanocavities remained greatly enhanced.

摘要

荧光纳米金刚石(FNDs)具有氮空位(NV)中心,因其生物相容性和稳定的光学特性而备受关注。然而,NV 中心位于 FNDs 的内部,以前开发的增强方法无法有效地提高 FNDs 的荧光强度。在本文中,我们提出了一种简单的纳米腔结构,可增强 FNDs 的荧光强度。设计的 Al/SiO2 纳米腔稳定且价格低廉,提供了一个可有效增强荧光的大区域,可覆盖大多数 100nm 的 FNDs。通过调整 Al/SiO2 纳米腔的覆盖 SiO2 层的厚度,可以控制和操纵 FNDs 的空间和光谱电场强度分布。通常,使用绿黄色激光激发 FNDs;FNDs 的宽带荧光包括来自中性(NV0)和带负电(NV-)NV 中心的发射。为了增强 FNDs 的 NV-中心的荧光强度,我们设计了一个 Al/70nm SiO2 纳米腔,分别在 633nm 和 710nm 的激发和发射波长下工作,允许高效激发 NV-中心;因此,我们实现了荧光强度增强 11.2 倍。此外,即使我们用聚甘油(形成 p-FND)覆盖 100nm FNDs,放置在纳米腔上的 p-FND 颗粒的荧光强度仍然大大增强。

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