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研究电荷输运对基于 PTB7:PCBM 的有机太阳能电池性能的影响。

Investigating the influence of charge transport on the performance of PTB7:PCBM based organic solar cells.

机构信息

Department of Solar Energy, School of Technology, Pandit Deendayal Petroleum University, Gandhinagar - 382007, India.

出版信息

Phys Chem Chem Phys. 2018 Jun 27;20(25):17304-17312. doi: 10.1039/c8cp02730g.

Abstract

A key challenge for researchers in the field of organic solar cells (OSCs) is to develop a physical model for a device that correctly describes the charge carrier transport phenomenon. In this article, an analytical study on the charge carrier transport phenomenon in an OSC is reported, which expresses a balance between free charge carrier generation and recombination in low mobility PTB7:PC71BM blend layers. First, the current density-voltage (J-V) data for the fabricated OSC were extracted from experiments by varying the incident power light intensity (IPL) and then analysis through theoretical simulation was used to quantify the dominant interface recombination parameters limiting the device's performance. It was found that although the generation of free charge carriers increased at higher IPL values, the performance of the device remained low due to poor electrical transport properties which resulted in a considerable accumulation of generated charge carriers in the active layer. Therefore, it has become important to work out the complex relation between charge carrier mobility, exciton-recombination dynamics and the overall electrical performance parameters in a single framework. This article explains the influence of incident power light intensity and charge carrier mobility on performance parameters, which limits the power conversion efficiency (PCE) of the OSC. The presented analysis could be helpful in optimizing the architecture of future devices to increase the PCE of OSCs.

摘要

对于有机太阳能电池(OSC)领域的研究人员来说,一个关键挑战是开发一个能够正确描述电荷载流子输运现象的器件物理模型。本文对 OSC 中的电荷载流子输运现象进行了分析研究,该模型表达了低迁移率 PTB7:PC71BM 共混层中自由电荷载流子产生和复合之间的平衡。首先,通过改变入射光功率强度(IPL)从实验中提取出所制备的 OSC 的电流密度-电压(J-V)数据,然后通过理论模拟进行分析,以量化限制器件性能的主要界面复合参数。结果表明,尽管在更高的 IPL 值下自由电荷载流子的产生增加,但由于电输运性能较差,器件的性能仍然较低,这导致在活性层中产生的电荷载流子大量积累。因此,在单个框架中阐明电荷载流子迁移率、激子复合动力学和整体电性能参数之间的复杂关系变得非常重要。本文解释了入射光功率强度和电荷载流子迁移率对性能参数的影响,这限制了 OSC 的功率转换效率(PCE)。所提出的分析有助于优化未来器件的结构,以提高 OSC 的 PCE。

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