Zhang Yaohong, Wu Guohua, Ding Chao, Liu Feng, Yao Yingfang, Zhou Yong, Wu Congping, Nakazawa Naoki, Huang Qingxun, Toyoda Taro, Wang Ruixiang, Hayase Shuzi, Zou Zhigang, Shen Qing
Faculty of Informatics and Engineering , The University of Electro-Communications , Tokyo 182-8585 , Japan.
School of Materials Science and Engineering , Shaanxi Normal University , Xi'an 710119 , China.
J Phys Chem Lett. 2018 Jul 5;9(13):3598-3603. doi: 10.1021/acs.jpclett.8b01514. Epub 2018 Jun 18.
Lead selenide (PbSe) colloidal quantum dots (CQDs) are considered to be a strong candidate for high-efficiency colloidal quantum dot solar cells (CQDSCs) due to its efficient multiple exciton generation. However, currently, even the best PbSe CQDSCs can only display open-circuit voltage ( V) about 0.530 V. Here, we introduce a solution-phase ligand exchange method to prepare PbI-capped PbSe (PbSe-PbI) CQD inks, and for the first time, the absorber layer of PbSe CQDSCs was deposited in one step by using this PbSe-PbI CQD inks. One-step-deposited PbSe CQDs absorber layer exhibits fast charge transfer rate, reduced energy funneling, and low trap assisted recombination. The champion large-area (active area is 0.35 cm) PbSe CQDSCs fabricated with one-step PbSe CQDs achieve a power conversion efficiency (PCE) of 6.0% and a V of 0.616 V, which is the highest V among PbSe CQDSCs reported to date.
由于其高效的多激子产生，硒化铅（PbSe）胶体量子点（CQDs）被认为是高效胶体量子点太阳能电池（CQDSCs）的有力候选材料。然而，目前即使是最好的PbSe CQDSCs也只能显示约0.530 V的开路电压（V）。在此，我们引入一种溶液相配体交换方法来制备PbI包覆的PbSe（PbSe-PbI）CQD油墨，并且首次使用这种PbSe-PbI CQD油墨一步沉积PbSe CQDSCs的吸收层。一步沉积的PbSe CQD吸收层表现出快速的电荷转移速率、减少的能量漏斗效应以及低陷阱辅助复合。用一步法PbSe CQDs制备的冠军大面积（活性面积为0.35 cm²）PbSe CQDSCs实现了6.0%的功率转换效率（PCE）和0.616 V的V，这是迄今为止报道的PbSe CQDSCs中最高的V。
