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用于可见光到近红外下转换的磷化铟量子点对镧系元素发射的宽带敏化

Broadband Sensitization of Lanthanide Emission with Indium Phosphide Quantum Dots for Visible to Near-Infrared Downshifting.

作者信息

Swabeck Joseph K, Fischer Stefan, Bronstein Noah D, Alivisatos A Paul

机构信息

Materials Sciences Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States.

Department of Chemistry , University of California-Berkeley , Berkeley , California 94720 , United States.

出版信息

J Am Chem Soc. 2018 Jul 25;140(29):9120-9126. doi: 10.1021/jacs.8b02612. Epub 2018 Jul 13.

DOI:10.1021/jacs.8b02612
PMID:29924609
Abstract

Semiconductor quantum dot (QD)-sensitized lanthanide ions hold great promise in producing a broadly absorbing and sharply emitting luminophore, but their synthesis has proven to be difficult. We report the first synthesis of core/shell/shell InP/Ln YF/ShF (Ln = Yb, Nd; Sh = Lu, Y) nanocrystals that exhibit a broad visible absorption coupled to a sharp near-infrared emission. Additionally, this is the first report of Nd being coupled to a QD absorber. We characterize the system with a variety of electron microscopy and X-ray techniques that prove this unique structure. Optical measurements confirm the correlation of the Ln emission to the QD absorption, while the presence of a trap-state emission gives a clue as to the mechanism of energy transfer between the dot and the lanthanide.

摘要

半导体量子点(QD)敏化的镧系离子在产生具有广泛吸收和尖锐发射的发光体方面具有巨大潜力,但事实证明其合成困难。我们报告了首例核/壳/壳结构的InP/Ln YF/ShF(Ln = Yb、Nd;Sh = Lu、Y)纳米晶体的合成,该纳米晶体表现出与尖锐近红外发射耦合的宽可见吸收。此外,这是关于Nd与QD吸收体耦合的首次报道。我们用多种电子显微镜和X射线技术对该体系进行了表征,这些技术证实了这种独特结构。光学测量证实了Ln发射与QD吸收之间的相关性,而陷阱态发射的存在为量子点与镧系元素之间的能量转移机制提供了线索。

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