Kim Sang-Kon
J Nanosci Nanotechnol. 2018 Oct 1;18(10):7124-7127. doi: 10.1166/jnn.2018.15483.
For the wavelength reduction to overcome the diffraction limit of the optical lithography, the surface plasmon lithography (SPL) has lower cost and simpler system configuration than the extreme ultraviolet (EUV) lithography. In this paper, for the below 10-nm critical dimension (CD) as one of critical challenges in the lithography technology, SPL based on the SP interference and metamaterial in bowtie and hexahedron structures is proposed and demonstrated by using computer simulations such as the rigorous coupled-wave analysis (RCWA) method and the finite difference time domain (FDTD) method. For 193-nm wavelength, the minimum FWHM (the full width at half maximum) of the transverse magnetic (TM) intensity in xz plane (and yz plane) is 10-nm (and 7-nm) in a bowtie plasmonic structure. For hexahedron structures, the minimum 30-nm FWHM of TM intensity with 193-nm wavelength is improved to the minimum 16-nm FWHM by using metamaterial and SP interference.
为了通过波长缩减来突破光学光刻的衍射极限，表面等离子体光刻（SPL）相比于极紫外（EUV）光刻具有更低的成本和更简单的系统配置。在本文中，针对光刻技术中的关键挑战之一——低于10纳米的关键尺寸（CD），提出并通过诸如严格耦合波分析（RCWA）方法和时域有限差分（FDTD）方法等计算机模拟，演示了基于蝴蝶结和六面体结构中的表面等离子体（SP）干涉和超材料的表面等离子体光刻。对于193纳米波长，在蝴蝶结等离子体结构中，xz平面（以及yz平面）内横向磁（TM）强度的最小半高宽（FWHM）为10纳米（以及7纳米）。对于六面体结构，利用超材料和表面等离子体干涉，将193纳米波长下TM强度的最小半高宽30纳米提升至最小16纳米。
