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基于用于计算光刻的RCWA算法的三维等离子体光刻成像建模

Three-dimensional plasmonic lithography imaging modeling based on the RCWA algorithm for computational lithography.

作者信息

Ding Huwen, Fan Taian, Zhang Libin, Wei Yayi, Ye Tianchun

出版信息

Opt Express. 2023 Oct 23;31(22):36061-36077. doi: 10.1364/OE.500590.

DOI:10.1364/OE.500590
PMID:38017764
Abstract

This paper reminds the principle and characteristics of plasmonic lithography, and points out the importance of establishing a fast and high precision plasmonic lithography imaging model and developing computational lithography. According to the characteristics of plasmonic lithography, the rigorous coupled-wave analysis (RCWA) algorithm is a very suitable alternative algorithm. In this paper, a three-dimensional plasmonic lithography model based on RCWA algorithm is established for computational lithography requirements. This model improves the existing RCWA algorithm, that is, deduces the formula for calculating the light field inside the structure and proposes the integration, storage and invocation of the scattering matrix to improve the computation speed. Finally, the results are compared with commercial software for the two typical patterns. The results show that the two calculation results are very close, with the root mean square error (RMSE) less than 0.04 (V/m). In addition, the calculation speed can be increased by more than 2 times in the first calculation, and by about 8 times by integrating, storing and invoking the scattering matrix, which creates conditions for the development of plasmonic computational lithography.

摘要

本文阐述了表面等离激元光刻的原理和特点,指出建立快速高精度表面等离激元光刻成像模型以及开展计算光刻的重要性。根据表面等离激元光刻的特点,严格耦合波分析(RCWA)算法是一种非常合适的替代算法。本文针对计算光刻需求,建立了基于RCWA算法的三维表面等离激元光刻模型。该模型改进了现有的RCWA算法,即推导了结构内部光场的计算公式,并提出了散射矩阵的积分、存储和调用方法以提高计算速度。最后,针对两种典型图案将结果与商业软件进行了比较。结果表明,两种计算结果非常接近,均方根误差(RMSE)小于0.04(V/m)。此外,首次计算时计算速度可提高2倍以上,通过对散射矩阵进行积分、存储和调用,计算速度可提高约8倍,为表面等离激元计算光刻的发展创造了条件。

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