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Commentary: A channelopathy mutation in the voltage-sensor discloses contributions of a conserved phenylalanine to gating properties of Kv1.1 channels and ataxia.

作者信息

Hasan Sonia, Hunter Therese, Hunter Gary, Pessia Mauro, D'Adamo Maria Cristina

机构信息

Department of Physiology, Faculty of Medicine Kuwait University, Kuwait City, Kuwait.

Department of Physiology and Biochemistry, Faculty of Medicine and Surgery University of Malta, Msida, Malta.

出版信息

Front Cell Neurosci. 2018 Jun 20;12:174. doi: 10.3389/fncel.2018.00174. eCollection 2018.

DOI:10.3389/fncel.2018.00174
PMID:29973872
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6019458/
Abstract
摘要
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a533/6019458/c0ff6da39357/fncel-12-00174-g0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a533/6019458/c0ff6da39357/fncel-12-00174-g0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a533/6019458/c0ff6da39357/fncel-12-00174-g0001.jpg

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本文引用的文献

1
A channelopathy mutation in the voltage-sensor discloses contributions of a conserved phenylalanine to gating properties of Kv1.1 channels and ataxia.电压传感器中的通道病突变揭示了保守苯丙氨酸对 Kv1.1 通道和共济失调门控特性的贡献。
Sci Rep. 2017 Jul 4;7(1):4583. doi: 10.1038/s41598-017-03041-z.
2
A Disease Mutation Causing Episodic Ataxia Type I in the S1 Links Directly to the Voltage Sensor and the Selectivity Filter in Kv Channels.一种导致I型发作性共济失调的疾病突变在S1中直接与电压门控钾通道的电压感受器和选择性过滤器相连。
J Neurosci. 2015 Sep 2;35(35):12198-206. doi: 10.1523/JNEUROSCI.1419-15.2015.
3
Hydrophobic gating in ion channels.
Front Neurol. 2018 Jul 25;9:587. doi: 10.3389/fneur.2018.00587. eCollection 2018.
离子通道中的疏水门控
J Mol Biol. 2015 Jan 16;427(1):121-30. doi: 10.1016/j.jmb.2014.07.030. Epub 2014 Aug 12.
4
The conserved phenylalanine in the K+ channel voltage-sensor domain creates a barrier with unidirectional effects.钾通道电压传感器域中保守的苯丙氨酸形成具有单向效应的屏障。
Biophys J. 2013 Jan 8;104(1):75-84. doi: 10.1016/j.bpj.2012.11.3827.
5
Mechanism of voltage gating in potassium channels.钾通道电压门控机制。
Science. 2012 Apr 13;336(6078):229-33. doi: 10.1126/science.1216533.
6
Control of a final gating charge transition by a hydrophobic residue in the S2 segment of a K+ channel voltage sensor.S2 段疏水性残基控制 K+ 通道电压传感器的最后门控电荷转变。
Proc Natl Acad Sci U S A. 2011 Apr 19;108(16):6444-9. doi: 10.1073/pnas.1103397108. Epub 2011 Apr 4.
7
A gating charge transfer center in voltage sensors.电压传感器中的门控电荷转移中心。
Science. 2010 Apr 2;328(5974):67-73. doi: 10.1126/science.1185954.
8
Principles of conduction and hydrophobic gating in K+ channels.K+ 通道的传导和疏水性门控原理。
Proc Natl Acad Sci U S A. 2010 Mar 30;107(13):5833-8. doi: 10.1073/pnas.0911691107. Epub 2010 Mar 15.
9
Contribution of the central hydrophobic residue in the PXP motif of voltage-dependent K+ channels to S6 flexibility and gating properties.电压依赖性钾离子通道PXP基序中的中心疏水残基对S6灵活性和门控特性的贡献。
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A novel KCNA1 mutation identified in an Italian family affected by episodic ataxia type 1.在一个受发作性共济失调1型影响的意大利家族中鉴定出一种新的KCNA1突变。
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