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单层1T-NbSe的电子结构:晶格畸变、非局域交换和莫特-哈伯德关联的相互作用

Electronic structure of single layer 1T-NbSe: interplay of lattice distortions, non-local exchange, and Mott-Hubbard correlations.

作者信息

Kamil E, Berges J, Schönhoff G, Rösner M, Schüler M, Sangiovanni G, Wehling T O

机构信息

Institut für Theoretische Physik, Universität Bremen, Otto-Hahn-Allee 1, D-28359 Bremen, Germany. Bremen Center for Computational Materials Science, Universität Bremen, Am Fallturm 1a, D-28359 Bremen, Germany.

出版信息

J Phys Condens Matter. 2018 Aug 15;30(32):325601. doi: 10.1088/1361-648X/aad215. Epub 2018 Jul 9.

Abstract

Using ab initio calculations we reveal the nature of the insulating phase recently found experimentally in monolayer 1T-NbSe. We find soft phonon modes in a large part of the Brillouin zone indicating the strong-coupling nature of a charge-density-wave instability. Structural relaxation of a [Formula: see text] supercell reveals a Star-of-David reconstruction with an energy gain of 60 meV per primitive unit cell. The band structure of the distorted phase exhibits a half-filled flat band which is associated with orbitals that are delocalized over several atoms in each Star of David. By including many-body corrections through a combined GW, hybrid-functional, and DMFT treatment, we find the flat band to split into narrow Hubbard bands. The lowest energy excitation across the gap turns out to be between itinerant Se-p states and the upper Hubbard band, determining the system to be a charge-transfer insulator. Combined hybrid-functional and GW calculations show that long-range interactions shift the Se-p states to lower energies. Thus, a delicate interplay of local and long-range correlations determines the gap nature and its size in this distorted phase of the monolayer 1T-NbSe.

摘要

通过从头算计算,我们揭示了最近在单层1T-NbSe中实验发现的绝缘相的本质。我们在布里渊区的很大一部分发现了软声子模式,这表明电荷密度波不稳定性具有强耦合性质。一个[公式:见原文]超胞的结构弛豫揭示了一种大卫之星重构,每个原胞的能量增益为60毫电子伏。畸变相的能带结构呈现出一个半填充的平带,它与在每个大卫之星中跨越几个原子离域的轨道相关。通过结合GW、杂化泛函和动态平均场理论处理纳入多体修正,我们发现平带分裂成窄的哈伯德带。跨越能隙的最低能量激发结果是在巡游的Se-p态和上哈伯德带之间,这确定该系统为电荷转移绝缘体。结合杂化泛函和GW计算表明,长程相互作用将Se-p态的能量降低。因此,局部和长程关联之间的微妙相互作用决定了单层1T-NbSe这个畸变相中的能隙性质及其大小。

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