Ali Md Arafat, Wang Zhipeng, Hossain Mohammad Ikram, Ara Ferdous, Fakruddin Shahed Syed Mohammad, Komeda Tadahiro
Department of Chemistry, Graduate School of Science, Tohoku University, 6-3, Aramaki Aza-Aoba, Aoba-ku, Sendai, 980-8578, Japan.
Center for Spintronics Research Network, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577, Japan.
Sci Rep. 2025 Jul 1;15(1):20622. doi: 10.1038/s41598-025-07203-2.
NbSe is a transition metal dichalcogenide with a two-dimensional nature, showing superconducting (SC) and charge density properties. Moreover, a 1T phase can be made in the film, which has a different property from the bulk dominant 2 H phase, in which Mott insulator behavior is actively discussed. We observed the surface with STM at 400 mK and injected RF signal (1 GHz and 15 Hz) at the tunneling junction. We detected two quasi-particle (QP) states at the end of the SC gap, which split with the increase of the RF power specified by the electric field at the tunneling junction, V. A previous STM experiment with 65 GHz RF on a vanadium surface observed multiple replicas of the QP peak. However, our experimental result using 1 GHz RF shows a widening of QP features with two enhanced peaks shifted by ~ ± eV from the original QP positions. The behavior was well reproduced by a simulation using a well-known Tien-Gordon model, whose results indicate that the disappearance of multiple peaks is due to the low frequency of the RF signal. In addition, two enhanced peaks at ~ ± eV are deduced from the Bessel function behavior. The energy shift from the original peak linearly changes with eV. We apply this technique to examine the property change at the domain boundary of the 2 H and 1T phase of the NbSe surface. We found the superconducting gap decreases when we move the tip from the 2 H domain into the 1T domain. Moreover, the injection of RF splits a QP peak into two enhanced peaks, whose energy separation is linear with the electric field at the RF generator for both phases. However, the linear energy separation with V shows different coefficients between the 2 H and 1T phases. We conclude that the different coefficient is due to the change of actual V on the two domains originating from a different dielectric constant and shielding efficiency for the electric field of RF.
NbSe 是一种具有二维特性的过渡金属二硫属化物,表现出超导(SC)和电荷密度特性。此外,在薄膜中可以形成 1T 相,它具有与块状占主导的 2H 相不同的特性,在 2H 相中,莫特绝缘体行为受到积极讨论。我们在 400 mK 下用扫描隧道显微镜(STM)观察表面,并在隧道结处注入射频信号(1 GHz 和 15 Hz)。我们在超导能隙末端检测到两个准粒子(QP)态,它们随着隧道结处由电场指定的射频功率增加而分裂,V。之前在钒表面进行的 65 GHz 射频 STM 实验观察到了 QP 峰的多个副本。然而,我们使用 1 GHz 射频的实验结果显示 QP 特征变宽,有两个增强峰从原始 QP 位置偏移了约±eV。使用著名的田 - 戈登模型进行的模拟很好地再现了这种行为,其结果表明多个峰的消失是由于射频信号的低频。此外,从贝塞尔函数行为推导出在约±eV 处有两个增强峰。从原始峰的能量偏移随 eV 线性变化。我们应用此技术来研究 NbSe 表面 2H 相和 1T 相畴边界处的性质变化。我们发现当将针尖从 2H 畴移动到 1T 畴时,超导能隙减小。此外,注入射频会将一个 QP 峰分裂成两个增强峰,对于两个相,其能量间隔与射频发生器处的电场呈线性关系。然而,与 V 的线性能量间隔在 2H 相和 1T 相之间显示出不同的系数。我们得出结论,不同的系数是由于两个畴上实际 V 的变化,这源于对射频电场不同的介电常数和屏蔽效率。