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金属有机框架UiO - 66中的空位缺陷构型:能量学与电子结构

Vacancy defect configurations in the metal-organic framework UiO-66: energetics and electronic structure.

作者信息

Svane Katrine L, Bristow Jessica K, Gale Julian D, Walsh Aron

机构信息

Department of Chemistry , University of Bath , Bath , UK . Email:

Curtin Institute for Computation , Department of Chemistry , Curtin University , PO Box U1987 , Perth , WA 6845 , Australia.

出版信息

J Mater Chem A Mater. 2018 May 14;6(18):8507-8513. doi: 10.1039/c7ta11155j. Epub 2018 Apr 24.

DOI:10.1039/c7ta11155j
PMID:30009026
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6003546/
Abstract

Vacancy lattice sites in the metal-organic framework UiO-66 are known to have a profound effect on the material properties. Here we use density functional theory to compare the energies of defect arrangements containing missing linkers and missing metal clusters for different choices of charge compensation. Our results show that the preference for missing metal clusters or missing linker defects depends on the charge compensation as well as the overall concentration of defects in the crystal. Both regimes can be experimentally accessible depending on the synthesis conditions. We investigate the electronic structure of the different types of defects, showing that, despite some changes in the localisation of the frontier orbitals, the electronic energy levels are only weakly affected by the presence of point defects.

摘要

金属有机框架UiO-66中的空位晶格位点对材料性能有深远影响。在此,我们使用密度泛函理论来比较不同电荷补偿选择下包含缺失连接体和缺失金属簇的缺陷排列的能量。我们的结果表明,对缺失金属簇或缺失连接体缺陷的偏好取决于电荷补偿以及晶体中缺陷的总体浓度。根据合成条件,这两种情况在实验上都是可实现的。我们研究了不同类型缺陷的电子结构,结果表明,尽管前沿轨道的局域化有一些变化,但电子能级仅受到点缺陷存在的微弱影响。

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Instilling defect tolerance in new compounds.在新化合物中注入缺陷耐受性。
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Missing Linkers: An Alternative Pathway to UiO-66 Electronic Structure Engineering.缺失连接体:UiO-66电子结构工程的另一条途径。
Exploring Defect-Engineered Metal-Organic Frameworks with 1,2,4-Triazolyl Isophthalate and Benzoate Linkers.
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