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尖锐直径几何调制对双段式FeNi纳米线磁化反转的影响

Effect of Sharp Diameter Geometrical Modulation on the Magnetization Reversal of Bi-Segmented FeNi Nanowires.

作者信息

Méndez Miguel, Vega Víctor, González Silvia, Caballero-Flores Rafael, García Javier, Prida Víctor M

机构信息

Departamento de Física, Universidad de Oviedo, C/Federico Garcia Lorca 18, 33007-Oviedo, Asturias, Spain.

Laboratorio Membranas Nanoporosas, Servicios Científico-Técnicos, Universidad de Oviedo, Campus El Cristo s/n, 33006-Oviedo, Asturias, Spain.

出版信息

Nanomaterials (Basel). 2018 Aug 5;8(8):595. doi: 10.3390/nano8080595.

Abstract

Controlling functional properties of matter and combining them for engineering a functional device is, nowadays, a common direction of the scientific community. For instance, heterogeneous magnetic nanostructures can make use of different types of geometrical and compositional modulations to achieve the control of the magnetization reversal along with the nano-entities and, thus, enable the fabrication of spintronic, magnetic data storage, and sensing devices, among others. In this work, diameter-modulated FeNi nanowires are fabricated paying special effort to obtain sharp transition regions between two segments of different diameters (from about 450 nm to 120 nm), enabling precise control over the magnetic behavior of the sample. Micromagnetic simulations performed on single bi-segmented nanowires predict a double step magnetization reversal where the wide segment magnetization switches near 16 kA/m through a vortex domain wall, while at 40 kA/m the magnetization of the narrow segment is reversed through a corkscrew-like mechanism. Finally, these results are confirmed with magneto-optic Kerr effect measurements at the transition of isolated bi-segmented nanowires. Furthermore, macroscopic vibrating sample magnetometry is used to demonstrate that the magnetic decoupling of nanowire segments is the main phenomenon occurring over the entire fabricated nanowires.

摘要

如今,控制物质的功能特性并将它们组合起来以制造功能器件是科学界的一个常见方向。例如,异质磁性纳米结构可以利用不同类型的几何和成分调制来实现对与纳米实体相关的磁化反转的控制,从而能够制造自旋电子器件、磁数据存储器件和传感器件等。在这项工作中,制备了直径调制的FeNi纳米线,并特别努力地在不同直径的两段(从约450纳米到120纳米)之间获得尖锐的过渡区域,从而能够精确控制样品的磁行为。对单个双段纳米线进行的微磁模拟预测了双步磁化反转,其中宽段磁化通过涡旋畴壁在接近16 kA/m时切换,而在40 kA/m时窄段磁化通过类似螺旋状的机制反转。最后,在孤立的双段纳米线的转变处通过磁光克尔效应测量证实了这些结果。此外,宏观振动样品磁强计被用于证明纳米线段的磁解耦是在整个制备的纳米线上发生的主要现象。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/161d/6116228/ab3aa8b04297/nanomaterials-08-00595-g001.jpg

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