Arzuza Luis C C, Vega Victor, Prida Victor M, Moura Karoline O, Pirota Kleber R, Béron Fanny
Physics Institute "Gleb Wataghin", Universidade Estadual de Campinas (UNICAMP), Campinas 13083-859, Brazil.
Physics Department, Universidade Federal da Paraíba (UFPB), João Pessoa 58051-900, Brazil.
Nanomaterials (Basel). 2021 Dec 16;11(12):3403. doi: 10.3390/nano11123403.
Geometrically modulated magnetic nanowires are a simple yet efficient strategy to modify the magnetic domain wall propagation since a simple diameter modulation can achieve its pinning during the nanowire magnetization reversal. However, in dense systems of parallel nanowires, the stray fields arising at the diameter interface can interfere with the domain wall propagation in the neighboring nanowires. Therefore, the magnetic behavior of diameter-modulated nanowire arrays can be quite complex and depending on both short and long-range interaction fields, as well as the nanowire geometric dimensions. We applied the first-order reversal curve (FORC) method to bi-segmented Ni nanowire arrays varying the wide segment (45-65 nm diameter, 2.5-10.0 μm length). The FORC results indicate a magnetic behavior modification depending on its length/diameter aspect ratio. The distributions either exhibit a strong extension along the coercivity axis or a main distribution finishing by a fork feature, whereas the extension greatly reduces in amplitude. With the help of micromagnetic simulations, we propose that a low aspect ratio stabilizes pinned domain walls at the diameter modulation during the magnetization reversal. In this case, long-range axial interaction fields nucleate a domain wall at the nanowire extremities, while short-range ones could induce a nucleation at the diameter interface. However, regardless of the wide segment aspect ratio, the magnetization reversal is governed by the local radial stray fields of the modulation near null magnetization. Our findings demonstrate the capacity of distinguishing between complex magnetic behaviors involving convoluted interaction fields.
几何调制的磁性纳米线是一种简单而有效的策略,可用于修改磁畴壁的传播,因为简单的直径调制可以在纳米线磁化反转期间实现其钉扎。然而,在平行纳米线的密集系统中,直径界面处产生的杂散场会干扰相邻纳米线中的畴壁传播。因此,直径调制的纳米线阵列的磁行为可能相当复杂,并且取决于短程和长程相互作用场以及纳米线的几何尺寸。我们将一阶反转曲线(FORC)方法应用于双段式镍纳米线阵列,改变宽段(直径45 - 65 nm,长度2.5 - 10.0 μm)。FORC结果表明磁行为的改变取决于其长度/直径纵横比。分布要么沿着矫顽力轴呈现强烈的延伸,要么主分布以叉状特征结束,而延伸幅度大大减小。借助微磁模拟,我们提出低纵横比在磁化反转期间使直径调制处的钉扎畴壁稳定。在这种情况下,长程轴向相互作用场在纳米线末端使畴壁成核,而短程相互作用场可能在直径界面处诱导成核。然而,无论宽段纵横比如何,磁化反转都由接近零磁化时调制的局部径向杂散场控制。我们的研究结果证明了区分涉及复杂相互作用场的复杂磁行为的能力。