Kádár Elisabet, Varela Eva Vico, Aldavert-Vera Laura, Huguet Gemma, Morgado-Bernal Ignacio, Segura-Torres Pilar
Departament de Biologia, Universitat de Girona, 17071, Girona, Spain.
Department of Biology, Sciences Faculty, University of Girona, C/Mª Aurèlia Capmany 40, Camous Montilivi, 17003, Girona, Spain.
BMC Neurosci. 2018 Aug 8;19(1):48. doi: 10.1186/s12868-018-0449-5.
Intracranial Self-Stimulation (ICSS) of the medial forebrain bundle (MFB) is a deep brain stimulation procedure, which has a powerful enhancement effect on explicit and implicit memory. However, the downstream synaptic plasticity events of MFB-ICSS in memory related areas have not been described thoroughly. This study complements previous work studying the effect of MFB-ICSS on the expression of the activity-regulated cytoskeleton-associated (Arc) protein, which has been widely established as a synaptic plasticity marker. We provide new integrated measurements from memory related regions and take possible regional hemispheric differences into consideration.
Arc protein expression levels were analyzed 4.5 h after MFB-ICSS by immunohistochemistry in the hippocampus, habenula, and memory related amygdalar and thalamic nuclei, in both the ipsilateral and contralateral hemispheres to the stimulating electrode location. MFB-ICSS was performed using the same paradigm which has previously been shown to facilitate memory. Our findings illustrate that MFB-ICSS upregulates the expression of Arc protein in the oriens and radiatum layers of ipsilateral CA1 and contralateral CA3 hippocampal regions; the hilus bilaterally, the lateral amygdala and dorsolateral thalamic areas as well as the central medial thalamic nucleus. In contrast, the central amygdala, mediodorsal and paraventricular thalamic nuclei, and the habenular complex did not show changes in Arc expression after MFB-ICSS.
Our results expand our knowledge of which specific memory related areas MFB-ICSS activates and, motivates the definition of three functionally separate groups according to their Arc-related synaptic plasticity response: (1) the hippocampus and dorsolateral thalamic area, (2) the central medial thalamic area and (3) the lateral amygdala.
内侧前脑束(MFB)的颅内自我刺激(ICSS)是一种深部脑刺激程序,对显性和隐性记忆具有强大的增强作用。然而,MFB-ICSS在记忆相关区域的下游突触可塑性事件尚未得到充分描述。本研究补充了之前关于MFB-ICSS对活性调节细胞骨架相关蛋白(Arc)表达影响的研究工作,Arc蛋白已被广泛确立为突触可塑性标记物。我们提供了来自记忆相关区域的新的综合测量数据,并考虑了可能的区域半球差异。
通过免疫组织化学分析MFB-ICSS后4.5小时海马体、缰核以及与记忆相关的杏仁核和丘脑核中Arc蛋白的表达水平,这些区域位于刺激电极位置同侧和对侧半球。MFB-ICSS采用与之前已证明可促进记忆的相同范式进行。我们的研究结果表明,MFB-ICSS上调同侧CA1区的海马伞和辐射层、对侧CA3海马区、双侧齿状回、外侧杏仁核和背外侧丘脑区以及中央内侧丘脑核中Arc蛋白的表达。相比之下,中央杏仁核、丘脑背内侧核和室旁核以及缰核复合体在MFB-ICSS后Arc表达未显示变化。
我们的结果扩展了我们对MFB-ICSS激活哪些特定记忆相关区域的认识,并根据其与Arc相关的突触可塑性反应推动定义三个功能上独立的组:(1)海马体和背外侧丘脑区,(2)中央内侧丘脑区,(3)外侧杏仁核。