National Institute for Research and Development in Microtechnologies (IMT Bucharest), Erou Iancu Nicolae Street 126A, 077190 Voluntari (Ilfov), Romania.
Nanotechnology. 2018 Nov 2;29(44):445203. doi: 10.1088/1361-6528/aada6a. Epub 2018 Aug 15.
HfZrO ferroelectrics with a thickness of 6 nm were grown directly on Si using atomic layer deposition, top and bottom metallic electrodes being subsequently deposited by electron-beam metallization techniques. Depending on the polarity of the ±10 V poling voltages, the current-voltage dependence of these tunneling diodes shows a rectifying behavior for different polarizations, the ON-OFF ratio being about 10. Because the currents are at mA level, the HfZrO tunneling diodes coupled to an antenna array can harvest electromagnetic energy at 26 GHz (a bandwidth designated for internet of things), with a responsivity of 63 V W and a NEP of 4 nW/Hz.
使用原子层沉积技术在 Si 上直接生长厚度为 6nm 的 HfZrO 铁电体，然后通过电子束金属化技术沉积顶部和底部金属电极。根据 ±10V 极化电压的极性，这些隧道二极管的电流-电压关系在不同的极性下表现出整流行为，导通-关断比约为 10。由于电流处于毫安级别，与天线阵列耦合的 HfZrO 隧道二极管可以在 26GHz（物联网指定的带宽）处收集电磁能，其响应率为 63V/W，NEP 为 4nW/Hz。
