Dragoman Mircea, Aldrigo Martino, Dragoman Daniela
National Institute for Research and Development in Microtechnologies (IMT Bucharest), Erou Iancu Nicolae Street 126A, 077190 Voluntari, Romania.
Physics Faculty, University of Bucharest, P.O. Box MG-11, 077125 Bucharest, Romania.
Nanomaterials (Basel). 2021 Mar 3;11(3):625. doi: 10.3390/nano11030625.
Nanomaterials science is becoming the foundation stone of high-frequency applications. The downscaling of electronic devices and components allows shrinking chip's dimensions at a more-than-Moore rate. Many theoretical limits and manufacturing constraints are yet to be taken into account. A promising path towards nanoelectronics is represented by atomic-scale materials. In this manuscript, we offer a perspective on a specific class of devices, namely switches designed and fabricated using two-dimensional or nanoscale materials, like graphene, molybdenum disulphide, hexagonal boron nitride and ultra-thin oxides for high-frequency applications. An overview is provided about three main types of microwave and millimeter-wave switch: filament memristors, nano-ionic memristors and ferroelectric junctions. The physical principles that govern each switch are presented, together with advantages and disadvantages. In the last part we focus on zirconium-doped hafnium oxide ferroelectrics (HfZrO) tunneling junctions (FTJ), which are likely to boost the research in the domain of atomic-scale materials applied in engineering sciences. Thanks to their Complementary Metal-Oxide Semiconductor (CMOS) compatibility and low-voltage tunability (among other unique physical properties), HfZrO compounds have the potential for large-scale applicability. As a practical case of study, we present a 10 GHz transceiver in which the switches are FTJs, which guarantee excellent isolation and ultra-fast switching time.
纳米材料科学正成为高频应用的基石。电子设备和组件的尺寸缩小使得芯片尺寸能以远超摩尔定律的速度缩减。许多理论极限和制造限制仍有待考虑。原子尺度材料为纳米电子学提供了一条充满前景的道路。在本手稿中，我们对一类特定的器件给出了一个观点，即使用二维或纳米尺度材料（如石墨烯、二硫化钼、六方氮化硼和超薄氧化物）设计和制造的用于高频应用的开关。文中概述了三种主要类型的微波和毫米波开关：丝状忆阻器、纳米离子忆阻器和铁电结。介绍了每种开关所遵循的物理原理，以及其优缺点。在最后一部分，我们聚焦于掺锆氧化铪铁电体（HfZrO）隧道结（FTJ），它们可能会推动工程科学中原子尺度材料领域的研究。由于其互补金属氧化物半导体（CMOS）兼容性和低电压可调性（以及其他独特的物理特性），HfZrO化合物具有大规模应用的潜力。作为一个实际的研究案例，我们展示了一个10 GHz收发器，其中的开关是FTJ，它能保证出色的隔离度和超快的开关时间。
