Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education , Xiangtan University , Hunan 411105 , China.
Material and Chemical Research Laboratories , Industrial Technology Research Institute , Hsinchu 31040 , Taiwan.
ACS Appl Mater Interfaces. 2018 Sep 12;10(36):30574-30580. doi: 10.1021/acsami.8b10272. Epub 2018 Aug 29.
In the era of Internet of Things, the demand for flexible and transparent electronic devices has shifted to the forefront of materials science research. However, the radiation damage to key performance of transparent devices under radiative environment remains as a critical issue. Here, we present a promising technology for nonvolatile transparent electronic devices based on flexible oxide heteroepitaxy. A direct fabrication of epitaxial lead lanthanum zirconate titanate on transparent flexible mica substrate with indium tin oxide electrodes is presented. The transparent flexible ferroelectric heterostructures not only retain their superior performance, thermal stability, reliability, and mechanical durability, but also exhibit remarkably robust properties against to a strong radiation exposure. Our study demonstrates an extraordinary concept to realize transparent flexible nonvolatile electronic devices for the design and development of next-generation smart devices with potential application in electronics, automotive, aerospace, and nuclear systems.
在物联网时代，对灵活透明电子设备的需求已经成为材料科学研究的前沿。然而，辐射环境对透明器件关键性能的辐射损伤仍然是一个关键问题。在这里，我们提出了一种基于柔性氧化物异质外延的非易失性透明电子器件的有前途的技术。在透明柔性云母基底上直接制备具有氧化铟锡电极的外延铅镧锆钛酸盐。透明柔性铁电异质结构不仅保留了其优越的性能、热稳定性、可靠性和机械耐久性，而且表现出对强辐射暴露的显著稳健性。我们的研究展示了一个非凡的概念，即实现透明柔性非易失性电子器件，用于设计和开发具有潜在应用的下一代智能设备，包括电子、汽车、航空航天和核系统。
