Jiang Jie, Bitla Yugandhar, Peng Qiang-Xiang, Zhou Yi-Chun, Chu Ying-Hao
Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, Xiangtan University.
Department of Physics, Indian Institute of Science.
J Vis Exp. 2018 Apr 8(134):57221. doi: 10.3791/57221.
Flexible non-volatile memories have received much attention as they are applicable for portable smart electronic device in the future, relying on high-density data storage and low-power consumption capabilities. However, the high-quality oxide based nonvolatile memory on flexible substrates is often constrained by the material characteristics and the inevitable high-temperature fabrication process. In this paper, a protocol is proposed to directly grow an epitaxial yet flexible lead zirconium titanate memory element on muscovite mica. The versatile deposition technique and measurement method enable the fabrication of flexible yet single-crystalline non-volatile memory elements necessary for the next generation of smart devices.
柔性非易失性存储器因其具有高密度数据存储和低功耗能力，适用于未来的便携式智能电子设备，因而备受关注。然而，基于氧化物的高质量柔性衬底非易失性存储器常常受到材料特性和不可避免的高温制造工艺的限制。本文提出了一种在白云母上直接生长外延且柔性的钛酸铅锆记忆元件的方案。这种通用的沉积技术和测量方法能够制造出下一代智能设备所需的柔性且单晶的非易失性存储元件。
