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探索极性氧化物界面处的量子限域和电子结构。

Probing Quantum Confinement and Electronic Structure at Polar Oxide Interfaces.

作者信息

Li Danfeng, Lemal Sébastien, Gariglio Stefano, Wu Zhenping, Fête Alexandre, Boselli Margherita, Ghosez Philippe, Triscone Jean-Marc

机构信息

Department of Quantum Matter Physics University of Geneva 24 quai Ernest-Ansermet CH-1211 Geneva 4 Switzerland.

Theoretical Materials Physics Q-MAT CESAM Université de Liège B-4000 Liège Belgium.

出版信息

Adv Sci (Weinh). 2018 Jun 24;5(8):1800242. doi: 10.1002/advs.201800242. eCollection 2018 Aug.

DOI:10.1002/advs.201800242
PMID:30128239
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6097152/
Abstract

Polar discontinuities occurring at interfaces between two materials constitute both a challenge and an opportunity in the study and application of a variety of devices. In order to cure the large electric field occurring in such structures, a reconfiguration of the charge landscape sets in at the interface via chemical modifications, adsorbates, or charge transfer. In the latter case, one may expect a local electronic doping of one material: one example is the two-dimensional electron liquid (2DEL) appearing in SrTiO once covered by a polar LaAlO layer. Here, it is shown that tuning the formal polarization of a (La,Al) (Sr,Ti) O (LASTO:) overlayer modifies the quantum confinement of the 2DEL in SrTiO and its electronic band structure. The analysis of the behavior in magnetic field of superconducting field-effect devices reveals, in agreement with ab initio calculations and self-consistent Poisson-Schrödinger modeling, that quantum confinement and energy splitting between electronic bands of different symmetries strongly depend on the interface total charge densities. These results strongly support the polar discontinuity mechanisms with a full charge transfer to explain the origin of the 2DEL at the celebrated LaAlO/SrTiO interface and demonstrate an effective tool for tailoring the electronic structure at oxide interfaces.

摘要

在两种材料的界面处出现的极性不连续性,在各种器件的研究和应用中既构成挑战,也带来机遇。为了消除此类结构中出现的大电场,通过化学修饰、吸附物或电荷转移,在界面处会发生电荷分布的重新配置。在后一种情况下,人们可能会预期一种材料发生局部电子掺杂:一个例子是,当SrTiO被极性LaAlO层覆盖时会出现二维电子液体(2DEL)。在此表明,调节(La,Al)(Sr,Ti)O(LASTO:)覆盖层的形式极化会改变SrTiO中2DEL的量子限制及其电子能带结构。对超导场效应器件在磁场中的行为分析表明,与从头算计算和自洽泊松-薛定谔模型一致,不同对称性电子能带之间的量子限制和能量分裂强烈依赖于界面总电荷密度。这些结果有力地支持了具有完全电荷转移的极性不连续性机制,以解释著名的LaAlO/SrTiO界面处2DEL的起源,并展示了一种用于定制氧化物界面电子结构的有效工具。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b91/6097152/f09c01fcf25a/ADVS-5-1800242-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b91/6097152/e259beb8bef6/ADVS-5-1800242-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b91/6097152/5e3ff7995a2b/ADVS-5-1800242-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b91/6097152/1d729c4bf405/ADVS-5-1800242-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b91/6097152/f09c01fcf25a/ADVS-5-1800242-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b91/6097152/e259beb8bef6/ADVS-5-1800242-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b91/6097152/5e3ff7995a2b/ADVS-5-1800242-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b91/6097152/1d729c4bf405/ADVS-5-1800242-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b91/6097152/f09c01fcf25a/ADVS-5-1800242-g004.jpg

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本文引用的文献

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