Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, Zhejiang, People's Republic of China. ShanghaiTech University, Pudong, Shanghai, 201210, People's Republic of China. University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China.
Nanotechnology. 2018 Nov 9;29(45):45LT01. doi: 10.1088/1361-6528/aaddc8. Epub 2018 Aug 30.
Enhanced photoluminescence and improved internal quantum efficiency were demonstrated for ultraviolet light emitting diodes (UV-LEDs) with Al nanohole arrays deposited on the top surface. The effects of the thickness and periodicity of the plasmonic structures on the optical properties of UV-LEDs were studied, and an optimized nanohole array parameter was illustrated. Classical electrodynamic simulations showed that the radiated power is mostly concentrated along the edge of the Al nanohole arrays. Even though no obvious dip was observed in the transmission spectra associated with localized surface plasmon resonance, significant improvements in radiatiative recombination and light extraction efficiency were demonstrated, indicating the influence of Al nanohole arrays on the light emission control of UV-LEDs. It is anticipated that the enhanced luminescence can be obtained for various emitting wavelengths by directly adjusting the periodicity and morphology of the Al nanohole arrays and this new technology can alleviate crystal quality requirements of III-nitride thin films in the development of high efficiency UV optoelectronic devices.
在顶部沉积有 Al 纳米孔阵列的紫外发光二极管 (UV-LED) 中，展示了增强的光致发光和提高的内量子效率。研究了等离子体结构的厚度和周期性对 UV-LED 光学性质的影响，并说明了优化的纳米孔阵列参数。经典的电磁动力学模拟表明，辐射功率主要集中在 Al 纳米孔阵列的边缘。尽管与局域表面等离子体共振相关的透射光谱中没有观察到明显的吸收峰，但辐射复合和光提取效率得到了显著提高，这表明 Al 纳米孔阵列对 UV-LED 的发光控制有影响。预计通过直接调整 Al 纳米孔阵列的周期性和形态，可以获得各种发射波长的增强发光，并且这项新技术可以减轻 III 族氮化物薄膜在高效率紫外光电子器件开发中的晶体质量要求。
