Bai Yiming, Yang Bo, Chen Xiaohan, Wang Fuzhi, Hayat Tasawar, Alsaedi Ahmed, Tan Zhan'ao
State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electric Power University, Beijing, China.
Beijing Key Laboratory of Energy Safety and Clean Utilization, North China Electric Power University, Beijing, China.
Front Chem. 2018 Aug 20;6:292. doi: 10.3389/fchem.2018.00292. eCollection 2018.
Rationally controlling the vertical component distribution within a photoactive layer is crucial for efficient polymer solar cells (PSCs). Herein, fine-tuning the surface free energy (SFE) of the titanium(IV) oxide bis(2,4-pentanedionate) (TOPD) cathode buffer layer is proposed to achieve a desired perpendicular component distribution for the PBDB-T:ITIC-M photoactive layer. The Owens-Wendt method is adopted to precisely calculate the SFE of TOPD film jointly based on the water contact angle and the diiodomethane contact angle. We find that the SFE of TOPD film increases as the annealing temperature rises, and the subtle SFE change causes the profound vertical component distribution within the bulk region of PBDB-T:ITIC-M. The results of secondary-ion mass spectroscopy visibly demonstrate that the TOPD film with an SFE of 48.71 mJ/cm, which is very close to that of the ITIC film (43.98 mJ/cm), tends to form desired vertical component distribution. Consequently, compared with conventional bulk heterojunction devices, the power conversion efficiency increases from 9.00 to 10.20% benefiting from the short circuit current density increase from 14.76 to 16.88 mA/cm. Our findings confirm that the SFE adjustment is an effective way of constructing the desired vertical component distribution and therefore achieving high-efficiency PSCs.
合理控制光活性层内的垂直组分分布对于高效聚合物太阳能电池(PSC)至关重要。在此,提出微调双(2,4 - 戊二酮)氧化钛(IV)(TOPD)阴极缓冲层的表面自由能(SFE),以实现PBDB - T:ITIC - M光活性层所需的垂直组分分布。采用欧文斯 - 温特方法,基于水接触角和二碘甲烷接触角联合精确计算TOPD薄膜的SFE。我们发现,TOPD薄膜的SFE随着退火温度的升高而增加,并且这种细微的SFE变化导致PBDB - T:ITIC - M本体区域内深刻的垂直组分分布。二次离子质谱的结果明显表明,SFE为48.71 mJ/cm²的TOPD薄膜(非常接近ITIC薄膜的43.98 mJ/cm²)倾向于形成所需的垂直组分分布。因此,与传统的体异质结器件相比,功率转换效率从9.00%提高到10.20%,这得益于短路电流密度从14.76 mA/cm²增加到16.88 mA/cm²。我们的研究结果证实,SFE调节是构建所需垂直组分分布从而实现高效PSC的有效方法。