Zhang Xin-Yuan, Han Donglai, Ma Ning, Gao Renxian, Zhu Aonan, Guo Shuang, Zhang Yongjun, Wang Yaxin, Yang Jinghai, Chen Lei
Changchun Institute of Optics, Fine Mechanics and Physics , Chinese Academy of Sciences , Changchun 130033 , PR China.
University of Chinese Academy of Sciences , Beijing 100049 , PR China.
J Phys Chem Lett. 2018 Oct 18;9(20):6047-6051. doi: 10.1021/acs.jpclett.8b02416. Epub 2018 Oct 4.
We discuss how the controllable carrier influences the localized surface plasmon resonance (LSPR) and charge transfer (CT) in the same system based on ultraviolet-visible and surface-enhanced Raman scattering (SERS) measurements. The LSPR can be easily tuned from 580 to 743 nm by changing the sputtering power of CuS in the Ag and CuS composite substrate. During this process, surprisingly, we find that the LSPR is proportional to the sputtering power of CuS. This observation indicates that LSPR can be accurately adjusted by changing the content of the semiconductor, or even the carrier density. Moreover, we characterize the carrier density through the detection of the Hall effect to analyze the Raman shift caused by CT and obtain the relationships between them. These fundamental discussions provide a guideline for tunable LSPR and the investigation of CT.
基于紫外-可见光谱和表面增强拉曼散射（SERS）测量，我们讨论了可控载流子如何影响同一系统中的局域表面等离子体共振（LSPR）和电荷转移（CT）。通过改变Ag和CuS复合衬底中CuS的溅射功率，LSPR可轻松从580 nm调谐至743 nm。在此过程中，令人惊讶的是，我们发现LSPR与CuS的溅射功率成正比。这一观察结果表明，通过改变半导体含量甚至载流子密度，可以精确调整LSPR。此外，我们通过检测霍尔效应来表征载流子密度，以分析CT引起的拉曼位移并获得它们之间的关系。这些基础讨论为可调谐LSPR和CT研究提供了指导。
