基于载流子密度依赖性Ag/ITO复合薄膜的电荷转移调控新见解。
Novel insight into charge transfer regulation based on carrier density-dependent Ag/ITO composite films.
作者信息
Jin Yang, Park Eungyeong, Tang Chenghao, Chu Qi, Jin Sila, Guo Shuang, Chen Lei, Jung Young Mee
机构信息
Key Laboratory of Preparation and Applications of Environmental Friendly Materials, Ministry of Education, College of Chemistry, Jilin Normal University, Changchun 130103, PR China.
Department of Chemistry, Institute for Molecular Science and Fusion Technology, Kangwon National University, Chuncheon 24341, Republic of Korea.
出版信息
Spectrochim Acta A Mol Biomol Spectrosc. 2022 Aug 5;276:121236. doi: 10.1016/j.saa.2022.121236. Epub 2022 Apr 5.
Cosputtering technology was utilized to prepare a Ag and indium tin oxide (ITO) composite on a flat polystyrene (PS) microsphere array. The carrier density estimated by Hall effect testing of different Sn concentrations in the cosputtered films can be tuned from 10 to 10 cm. The bandgap calculated based on ultraviolet photoelectron spectroscopy can be adjusted within the range of 3.95-4.02 eV. We explored the possible mechanism of charge transfer (CT) by varying the bandgap and explained the causes of the surface-enhanced Raman scattering (SERS). Surprisingly, a synchronous change in the CT process with the carrier density was discovered. This observation suggests that the CT process can be precisely regulated by changes in the composition of the metal-semiconductor nanostructures. Our study provides a reference for the application of Ag/ITO films as alternative near-infrared plasmonic materials.
采用共溅射技术在扁平聚苯乙烯（PS）微球阵列上制备了银与铟锡氧化物（ITO）复合材料。通过对共溅射薄膜中不同锡浓度进行霍尔效应测试估算出的载流子密度可在(10^{19})至(10^{20}\ cm^{-3})范围内调节。基于紫外光电子能谱计算出的带隙可在(3.95 - 4.02\ eV)范围内调整。我们通过改变带隙探索了电荷转移（CT）的可能机制，并解释了表面增强拉曼散射（SERS）的成因。令人惊讶的是，发现CT过程与载流子密度同步变化。这一观察结果表明，CT过程可通过金属-半导体纳米结构组成的变化进行精确调控。我们的研究为Ag/ITO薄膜作为替代近红外等离子体材料的应用提供了参考。
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