Surface polarons and optical micro-cavity modulated broad range multi-mode emission of Te-doped CdS nanowires.

The optical confinement and strong carrier coupling within a semiconductor nanostructure cavity are crucial for the modulation of emission properties. Fundamental understanding of the light-matter interaction in a low dimensional system is important. In this paper, we synthesized high-quality hexagonal Te-doped CdS nanowires by two-step chemical vapor deposition and investigated systematically the doping concentration, temperature, excitation power, excitation wavelength dependent Raman, photoluminescence and carrier lifetime decay. Scanning electron microscopy, energy dispersive x-ray spectrometry and x-ray diffraction confirmed Te-doping in the as-prepared samples. The strong surface optical (SO) phonon mode is observed in the micro-Raman spectra of an individual Te-CdS nanowire, which is unsuitable in large-sized structures. In situ micro-photoluminescence (μ-PL) characterization shows dominant confined defect state emission with whispering gallery mode (WGM) characteristics. The emission peak position shifts under increased excitation power, demonstrating the inelastic scattering by bound carriers. In addition, the short wavelength emission modes are dominant at a low temperature (80 K) while the long wavelength emission modes are dominant at a high temperature (300 K) due to different recombination processes contributing to the WGM resonant bands, which was also confirmed by the time-resolved PL measurement. All these results reflect strong coupling between the surface evanescent-wave in the WGM cavity and the SO phonon/polaron, which will facilitate the rational tailoring of surface/interface relevant properties for nanophotonic device applications.