Opt Lett. 2018 Sep 15;43(18):4473-4476. doi: 10.1364/OL.43.004473.
A three-stage cascade GaSb-based diode laser heterostructure with an enhanced optical gain spectral bandwidth was designed and fabricated. The gain broadening was achieved by varying the thickness of the type-I quantum wells in different stages of the cascade active region from 10 to 14 nm. The structures were processed into bent ridge gain chips with virtually eliminated feedback from the anti-reflection-coated angled facet. The external cavity devices based on a novel gain chip design demonstrated a record wide tuning range from 2.79 to 3.23 μm in a Littrow cavity configuration at 20°C.
设计并制作了具有增强的光增益光谱带宽的三阶级联 GaSb 基二极管激光异质结构。通过在级联有源区的不同阶段将 I 型量子阱的厚度从 10nm 变化到 14nm，实现了增益展宽。这些结构被加工成弯曲脊增益芯片，几乎消除了来自抗反射涂层斜面的反馈。基于新型增益芯片设计的外腔器件在 20°C 的里特罗腔配置下在 2.79μm 至 3.23μm 的范围内实现了创纪录的宽调谐范围。
