基于单个铟镓砷量子阱的外腔连续波高功率半导体激光器的超宽调谐范围（100纳米）

Ultrabroad tuning range (100 nm) of external-cavity continuous-wave high-power semiconductor lasers based on a single InGaAs quantum well.

作者信息

Podoskin Alexandr, Golovin Vyacheslav, Gavrina Polina, Veselov Dmitriy, Zolotarev Vasiliy, Shamakhov Viktor, Nikolaev Dmitrii, Leshko Andrey, Slipchenko Sergey, Pikhtin Nikita, Kopév Petr

出版信息

Appl Opt. 2019 Nov 20;58(33):9089-9093. doi: 10.1364/AO.58.009089.

DOI:10.1364/AO.58.009089

PMID:31873586

Abstract

An external cavity in Littrow configuration based on a reflective diffraction grating and a high-power semiconductor laser based on an asymmetric heterostructure with low optical loss was studied. A continuous-wave optical output power of 13 W with a linewidth of 0.15 nm was achieved for an external-cavity laser. It was shown that a decrease in the length of the laser chip to 1500 µm makes it possible to expand the tuning range of the lasing spectrum to 100 nm, while the maximum side-mode suppression reaches 45 dB, and at the edges of the spectral tuning range it is no worse than 30 dB. It was shown that the main factors in reducing the optical power when tuning the laser spectrum are an increase in the threshold current and internal optical loss of the laser chip.

摘要

研究了基于反射衍射光栅的 Littrow 配置外腔和基于具有低光损耗的不对称异质结构的高功率半导体激光器。外腔激光器实现了 13 W 的连续波光输出功率，线宽为 0.15 nm。结果表明，将激光芯片长度减小到 1500 µm 可以将激光光谱的调谐范围扩展到 100 nm，同时最大边模抑制达到 45 dB，并且在光谱调谐范围的边缘不低于 30 dB。结果表明，在调谐激光光谱时降低光功率的主要因素是激光芯片的阈值电流增加和内部光损耗增加。