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缺血性心肌病中心包心室性心动过速:患病率、电生理特征和长期消融治疗结果。

Epicardial ventricular tachycardia in ischemic cardiomyopathy: Prevalence, electrophysiological characteristics, and long-term ablation outcomes.

机构信息

Cardiac Electrophysiology Section, Cardiovascular Division, Hospital of the University of Pennsylvania, Philadelphia, Pennsylvania.

出版信息

J Cardiovasc Electrophysiol. 2018 Nov;29(11):1530-1539. doi: 10.1111/jce.13739. Epub 2018 Oct 8.

Abstract

INTRODUCTION

The characteristics of the epicardial (EPI) substrate responsible for ventricular tachycardia (VT) in ischemic cardiomyopathy (ICM) are undefined, and data on the long-term outcomes of EPI catheter ablation limited. We evaluated the prevalence, electrophysiologic features, and outcomes of catheter ablation of EPI VT in ICM.

METHODS AND RESULTS

From December 2010 to June 2013, a total of 13 of 93 (14%) patients with ICM underwent catheter ablation at our institution and had conclusive evidence of critical EPI substrate demonstrated to participate in VT with activation, entrainment and/or pace mapping during sinus rhythm (two other patients underwent EPI mapping but had no optimal ablation targets). The electrophysiologic substrate characteristics and activation/entrainment mapping data were compared with a reference group of ICM patients without evidence of critical EPI substrate (N = 44), defined as a complete procedural success (noninducibility of any VT at programmed stimulation) after endocardial (ENDO)-only ablation. Patients with failed EPI access (N = 2) or history of cardiac surgery (N = 92) were excluded from the study. All 13 patients had evidence of abnormal EPI substrate with fractionated/late/split electrograms and low-bipolar voltage areas. The critical VT ablation sites were all located within the EPI bipolar "dense" scar (<1.0 mV) opposite the ENDO bipolar scar in 77% of cases and extending beyond the ENDO bipolar scar (within the ENDO unipolar low-voltage area) in the remaining patients. Compared with the reference ENDO-only group, patients with EPI VT had a smaller ENDO bipolar scar area, 54.0 (37.1-84) vs 86.7 (55.6-112) cm ; P = 0.0159, with a similar extent of ENDO unipolar low voltage. No other substrate characteristics or location differed between the two groups. After 35.2 ± 24.2 months of follow-up, VT-free survival was 73% in patients with EPI VT compared with 66% in the ENDO-only group (log-rank P = 0.56).

CONCLUSIONS

The presence of the critical EPI substrate responsible for VT can be demonstrated in at least 14% of patients with ICM. The majority of EPI critical ablation sites are distributed opposite the ENDO bipolar scar area and catheter ablation is effective in achieving long-term arrhythmia control.

摘要

简介

导致缺血性心肌病(ICM)室性心动过速(VT)的心外膜(EPI)基质的特征尚未明确,且关于 EPI 导管消融的长期结果的数据有限。我们评估了在 ICM 中 EPI VT 导管消融的患病率、电生理特征和结果。

方法和结果

2010 年 12 月至 2013 年 6 月,我院共有 93 例 ICM 患者接受了导管消融治疗,其中 13 例(14%)患者有明确的 EPI 基质证据,表明在窦性节律下,EPI 基质有助于 VT 的发生(另外 2 例患者进行了 EPI 标测,但没有最佳的消融靶点)。电生理基质特征和激动/夺获标测数据与无 EPI 基质证据的 ICM 患者参考组(N=44)进行了比较,参考组定义为单纯心内膜(ENDO)消融后完全程序成功(程控刺激时无任何 VT 诱导)。EPI 进入失败(N=2)或有心脏手术史(N=92)的患者被排除在研究之外。所有 13 例患者均有异常 EPI 基质的证据,表现为碎裂/延迟/分离的心电图和低双极电压区。VT 的关键消融部位均位于 77%的病例中 ENDO 双极瘢痕相反的 EPI 双极“密集”瘢痕(<1.0 mV)内,而其余患者的关键消融部位则延伸至 ENDO 双极瘢痕之外(在 ENDO 单极低电压区内)。与参考的 ENDO 组相比,EPI VT 患者的 ENDO 双极瘢痕面积更小,分别为 54.0(37.1-84)cm2和 86.7(55.6-112)cm2(P=0.0159),ENDO 单极低电压范围相似。两组之间没有其他基质特征或位置的差异。EPI VT 患者的随访时间为 35.2±24.2 个月,VT 无复发生存率为 73%,而 ENDO 组为 66%(对数秩 P=0.56)。

结论

在至少 14%的 ICM 患者中可证明存在导致 VT 的关键 EPI 基质。EPI 关键消融部位主要分布于 ENDO 双极瘢痕区的对面,导管消融可有效实现长期心律失常控制。

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