Cardiac Electrophysiology Section, Cardiovascular Division, Hospital of the University of Pennsylvania, Philadelphia, Pennsylvania.
J Cardiovasc Electrophysiol. 2018 Nov;29(11):1530-1539. doi: 10.1111/jce.13739. Epub 2018 Oct 8.
The characteristics of the epicardial (EPI) substrate responsible for ventricular tachycardia (VT) in ischemic cardiomyopathy (ICM) are undefined, and data on the long-term outcomes of EPI catheter ablation limited. We evaluated the prevalence, electrophysiologic features, and outcomes of catheter ablation of EPI VT in ICM.
From December 2010 to June 2013, a total of 13 of 93 (14%) patients with ICM underwent catheter ablation at our institution and had conclusive evidence of critical EPI substrate demonstrated to participate in VT with activation, entrainment and/or pace mapping during sinus rhythm (two other patients underwent EPI mapping but had no optimal ablation targets). The electrophysiologic substrate characteristics and activation/entrainment mapping data were compared with a reference group of ICM patients without evidence of critical EPI substrate (N = 44), defined as a complete procedural success (noninducibility of any VT at programmed stimulation) after endocardial (ENDO)-only ablation. Patients with failed EPI access (N = 2) or history of cardiac surgery (N = 92) were excluded from the study. All 13 patients had evidence of abnormal EPI substrate with fractionated/late/split electrograms and low-bipolar voltage areas. The critical VT ablation sites were all located within the EPI bipolar "dense" scar (<1.0 mV) opposite the ENDO bipolar scar in 77% of cases and extending beyond the ENDO bipolar scar (within the ENDO unipolar low-voltage area) in the remaining patients. Compared with the reference ENDO-only group, patients with EPI VT had a smaller ENDO bipolar scar area, 54.0 (37.1-84) vs 86.7 (55.6-112) cm ; P = 0.0159, with a similar extent of ENDO unipolar low voltage. No other substrate characteristics or location differed between the two groups. After 35.2 ± 24.2 months of follow-up, VT-free survival was 73% in patients with EPI VT compared with 66% in the ENDO-only group (log-rank P = 0.56).
The presence of the critical EPI substrate responsible for VT can be demonstrated in at least 14% of patients with ICM. The majority of EPI critical ablation sites are distributed opposite the ENDO bipolar scar area and catheter ablation is effective in achieving long-term arrhythmia control.
导致缺血性心肌病(ICM)室性心动过速(VT)的心外膜(EPI)基质的特征尚未明确,且关于 EPI 导管消融的长期结果的数据有限。我们评估了在 ICM 中 EPI VT 导管消融的患病率、电生理特征和结果。
2010 年 12 月至 2013 年 6 月,我院共有 93 例 ICM 患者接受了导管消融治疗,其中 13 例(14%)患者有明确的 EPI 基质证据,表明在窦性节律下,EPI 基质有助于 VT 的发生(另外 2 例患者进行了 EPI 标测,但没有最佳的消融靶点)。电生理基质特征和激动/夺获标测数据与无 EPI 基质证据的 ICM 患者参考组(N=44)进行了比较,参考组定义为单纯心内膜(ENDO)消融后完全程序成功(程控刺激时无任何 VT 诱导)。EPI 进入失败(N=2)或有心脏手术史(N=92)的患者被排除在研究之外。所有 13 例患者均有异常 EPI 基质的证据,表现为碎裂/延迟/分离的心电图和低双极电压区。VT 的关键消融部位均位于 77%的病例中 ENDO 双极瘢痕相反的 EPI 双极“密集”瘢痕(<1.0 mV)内,而其余患者的关键消融部位则延伸至 ENDO 双极瘢痕之外(在 ENDO 单极低电压区内)。与参考的 ENDO 组相比,EPI VT 患者的 ENDO 双极瘢痕面积更小,分别为 54.0(37.1-84)cm2和 86.7(55.6-112)cm2(P=0.0159),ENDO 单极低电压范围相似。两组之间没有其他基质特征或位置的差异。EPI VT 患者的随访时间为 35.2±24.2 个月,VT 无复发生存率为 73%,而 ENDO 组为 66%(对数秩 P=0.56)。
在至少 14%的 ICM 患者中可证明存在导致 VT 的关键 EPI 基质。EPI 关键消融部位主要分布于 ENDO 双极瘢痕区的对面,导管消融可有效实现长期心律失常控制。