利用分层碳纳米管薄膜开发高效薄膜温度传感器。

Developing Efficient Thin Film Temperature Sensors Utilizing Layered Carbon Nanotube Films.

机构信息

Department of Mechanical Engineering, National Institute of Technology Delhi, Narela, Delhi 110040, India.

School of Mechanical Engineering, Kunsan National University, Daehak-ro 588, Gunsan, Jeonbuk 54150, Korea.

出版信息

Sensors (Basel). 2018 Sep 20;18(10):3182. doi: 10.3390/s18103182.

DOI:10.3390/s18103182

PMID:30241384

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6210711/

Abstract

In this paper, we present the fabrication of an efficient thin film temperature sensor utilizing chemical vapor deposited carbon nanotube (CNT) film as the sensing element on Si substrates, with diamond-like carbon (DLC):Ni as a catalyst in assisting CNT growth. The fabricated sensor showed good electrical response with change in temperature. Relative linear change in resistance of 18.4% for an increase in temperature from 22 °C to 200 °C was achieved. Various characterizing techniques, such as scanning electron microscopy (SEM) and Raman spectroscopy, were used to characterize the films. In an effort to study device performance, van der Pauw and Hall measurements were carried out to study the dependence of resistance on temperature and magnetic fields. Temperature coefficient of resistance of the sensor was calculated as 1.03 × 10/°C. All implications arising from the study are presented. The results establish the aptness of the as-grown CNT film to be used as an active sensing material in thin film temperature sensors.

摘要

本文提出了一种利用化学气相沉积碳纳米管（CNT）薄膜作为敏感元件，在 Si 衬底上制造高效薄膜温度传感器的方法，其中类金刚石碳（DLC）：Ni 作为催化剂辅助 CNT 生长。所制备的传感器在温度变化时表现出良好的电响应。在温度从 22°C 升高到 200°C 的过程中，电阻的相对线性变化达到了 18.4%。采用扫描电子显微镜（SEM）和拉曼光谱等各种表征技术对薄膜进行了表征。为了研究器件性能，进行了范德堡和 Hall 测量，以研究电阻对温度和磁场的依赖性。传感器的电阻温度系数计算为 1.03×10/°C。本文呈现了所有研究结果。研究结果表明，所生长的 CNT 薄膜适合用作薄膜温度传感器中的有源传感材料。