State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.
Nanoscale. 2018 Oct 4;10(38):18315-18322. doi: 10.1039/c8nr06311g.
Significantly enhanced luminance and current efficiency for inorganic light-emitting devices have been obtained by tetrabutylammonium bromide (TBAB) additive into perovskite precursors. Reduced nonradiative defects primarily passivated by TBAB and increased exciton binding energy are responsible for improvement of PeLED performance. By employing a TBAB-treated interfacial layer, interface defects are reduced and it results in further promotion of electroluminescence performance of PeLED, including turn-on voltage of 2.6 V, brightness as high as 67 300 cd m-2, current efficiency of 22.5 cd A-1 and external quantum efficiency of 6.28%. Our results shed light on optimization of inorganic PeLEDs by focusing on the removal of defects both at the grain boundaries and the interfaces between carrier transport layers and perovskite emitting layers.
通过在钙钛矿前驱体中添加四丁基溴化铵（TBAB），可以显著提高无机发光器件的亮度和电流效率。TBAB 主要钝化非辐射缺陷，并增加激子结合能，从而提高 PeLED 的性能。通过采用 TBAB 处理的界面层，可以减少界面缺陷，进一步促进 PeLED 的电致发光性能的提升，包括开启电压为 2.6V，亮度高达 67300cd/m2，电流效率为 22.5cd/A 和外量子效率为 6.28%。我们的研究结果表明，通过关注消除晶粒边界和载流子传输层与钙钛矿发光层之间界面处的缺陷，可以优化无机 PeLED。
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