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通过双边界面工程策略实现高效热蒸发钙钛矿发光器件

Efficient Thermally Evaporated Perovskite Light-Emitting Devices via a Bilateral Interface Engineering Strategy.

作者信息

Song Li, Huang Lixin, Liu Yuan, Guo Xiaoyang, Geng Chong, Xu Shu, Xia Yuanqin, Zhang Yuan, Luan Nannan, Hu Yongsheng

机构信息

Tianjin Key Laboratory of Electronic Materials and Devices, Hebei Key Laboratory of Advanced Laser Technology and Equipment, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, P.R. China.

State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.

出版信息

J Phys Chem Lett. 2021 Jul 8;12(26):6165-6173. doi: 10.1021/acs.jpclett.1c01592. Epub 2021 Jun 29.

DOI:10.1021/acs.jpclett.1c01592
PMID:34184904
Abstract

Physical vapor deposition has emerged as a promising strategy for efficient and stable all-inorganic perovskite light-emitting devices (PeLEDs). However, the thermally evaporated PeLEDs still suffer from unsatisfactory optoelectrical performance because of the massive nonradiative defects. Herein, we demonstrate an efficient bilateral interfacial defect-passivation strategy toward high-performance PeLEDs with a thermally deposited CsPbBr emissive layer (EML). Specifically, the nonradiative defects from the bulk as well as the EML/charge transport layer (CTL) interface are significantly suppressed by implementing the 3-amino-1-propanol (3AP)-modified PEDOT:PSS and introducing ammonium salts, respectively. Simultaneously, both the 3AP induced less-conductive CsPbBr and ammonium salts can balance the charge injection into the EML effectively. As a result, we achieved efficient PeLEDs based on thermally evaporated CsPbBr with a luminance of 15745 cd/m, current efficiency of 32 cd/A, external quantum efficiency of 8.86%, and lifetime of 3.74 h. The strategy proposed here may shed light on the development of highly efficient thermally evaporated PeLEDs.

摘要

物理气相沉积已成为一种用于高效稳定的全无机钙钛矿发光器件(PeLEDs)的有前景的策略。然而,由于大量的非辐射缺陷,热蒸发的PeLEDs的光电性能仍然不尽人意。在此,我们展示了一种针对具有热沉积CsPbBr发光层(EML)的高性能PeLEDs的高效双边界面缺陷钝化策略。具体而言,通过分别采用3-氨基-1-丙醇(3AP)改性的PEDOT:PSS和引入铵盐,可显著抑制来自本体以及EML/电荷传输层(CTL)界面的非辐射缺陷。同时,3AP诱导的导电性较低的CsPbBr和铵盐都能有效地平衡注入到EML中的电荷。结果,我们基于热蒸发的CsPbBr实现了高效的PeLEDs,其亮度为15745 cd/m²,电流效率为32 cd/A,外量子效率为8.86%,寿命为3.74小时。这里提出的策略可能为高效热蒸发PeLEDs的发展提供启示。

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