School of Electrical Engineering , Korea University , Seoul 02841 , Republic of Korea.
ACS Appl Mater Interfaces. 2018 Oct 10;10(40):33768-33772. doi: 10.1021/acsami.8b12385. Epub 2018 Sep 28.
We fabricate a Pt/Ag:SiO N /Ti programmable metallization cell exhibiting bidirectional threshold switching (TS) or nonvolatile resistive switching (RS) characteristics through a simple thermal annealing process. The cell composed of pristine Ag:SiO N layers showed self-limiting TS characteristics with high selectivity and extremely low OFF currents, whereas the same cell showed typical RS characteristics after thermal annealing at 250 °C. The operating mechanism was investigated using scanning transmission electron microscopy and X-ray photoelectron spectroscopy. Next, a Ag:SiO N -based one selector-one resistor device was fabricated by employing both TS and RS characteristics in a single cell, which exhibited excellent self-rectifying memory performance.
我们通过简单的热退火工艺制造了一种 Pt/Ag:SiO N /Ti 可编程金属化单元，该单元表现出双向阈值切换（TS）或非易失性电阻切换（RS）特性。由原始 Ag:SiO N 层组成的单元表现出自限性 TS 特性，具有高选择性和极低的 OFF 电流，而相同的单元在 250°C 下进行热退火后则表现出典型的 RS 特性。通过扫描透射电子显微镜和 X 射线光电子能谱研究了工作机制。接下来，通过在单个单元中利用 TS 和 RS 特性制造了一个 Ag:SiO N 基的一个选择器一个电阻器器件，该器件表现出优异的自整流存储性能。
