Department of Physics , Politecnico di Milano , Piazza Leonardo da Vinci 32 , I-20133 Milano , Italy.
Institute of Materials Science (ICMUV) , University of Valencia , Catedrático Beltrán 2 , E-46980 Valencia , Spain.
Nano Lett. 2018 Nov 14;18(11):6882-6891. doi: 10.1021/acs.nanolett.8b02774. Epub 2018 Oct 16.
In monolayer (1L) transition metal dichalcogenides (TMDs) the valence and conduction bands are spin-split because of the strong spin-orbit interaction. In tungsten-based TMDs the spin-ordering of the conduction band is such that the so-called dark excitons, consisting of electrons and holes with opposite spin orientation, have lower energy than A excitons. The transition from bright to dark excitons involves the scattering of electrons from the upper to the lower conduction band at the K point of the Brillouin zone, with detrimental effects for the optoelectronic response of 1L-TMDs, since this reduces their light emission efficiency. Here, we exploit the valley selective optical selection rules and use two-color helicity-resolved pump-probe spectroscopy to directly measure the intravalley spin-flip relaxation dynamics in 1L-WS. This occurs on a sub-ps time scale, and it is significantly dependent on temperature, indicative of phonon-assisted relaxation. Time-dependent ab initio calculations show that intravalley spin-flip scattering occurs on significantly longer time scales only at the K point, while the occupation of states away from the minimum of the conduction band significantly reduces the scattering time. Our results shed light on the scattering processes determining the light emission efficiency in optoelectronic and photonic devices based on 1L-TMDs.
在单层(1L)过渡金属二卤化物(TMD)中,由于强自旋轨道相互作用,价带和导带是自旋分裂的。在基于钨的 TMD 中,导带的自旋有序性使得所谓的暗激子(由具有相反自旋取向的电子和空穴组成)具有比 A 激子更低的能量。从亮激子到暗激子的转变涉及到电子从布里渊区的 K 点的上导带散射到下导带,这对 1L-TMD 的光电响应有不利影响,因为这会降低它们的光发射效率。在这里,我们利用谷选择性光学选择规则,并使用双色螺旋分辨泵浦探测光谱,直接测量 1L-WS 中的谷内自旋翻转弛豫动力学。这发生在亚皮秒时间尺度上,并且显著依赖于温度,表明是声子辅助弛豫。时变从头算计算表明,只有在 K 点,谷内自旋翻转散射才会发生在明显更长的时间尺度上,而导带最小值以外的状态的占据则显著降低了散射时间。我们的结果揭示了决定基于 1L-TMD 的光电和光子器件的光发射效率的散射过程。