Excellent thermal stability owing to Ge and C doping in SbTe-based high-speed phase-change memory.

The contradictory nature between transition speed and thermal stability of phase-change materials has always been the key limitation to the achievement of wide applications under harsh conditions. GeSbTe phase-change alloy is proposed here to feature high thermal stability (10 year data retention above 220 °C) and fast switching speed (SET programming speed up to 5 ns) for electronic storage. In mushroom-shaped device cells, the nanocomposite materials implement an endurance life of nearly 1 × 10 cycles. Such operation speed among high-temperature alloys is the best ever reported. And the moderate incorporation of C offers intriguing benefits that include enhanced thermal stability and reduced RESET voltage in the above-mentioned Ge-rich SbTe-based memory cells. Through microscopic analysis, the local segregation of C dopants can further refine the crystalline grains and thus induce a lower volume change and roughness upon heating. These properties are crucial with regard to the application potential in high-performance and high-density embedded memories.