Wang Lei, Ren Wang, Wen Jing, Xiong Bangshu
School of Information Engineering, Nanchang Hang Kong University, Nanchang 330069, China.
Shanghai Aerospace Electronic Technology Institute, Minxing district, Shanghai 201108, China.
Nanomaterials (Basel). 2018 Sep 29;8(10):772. doi: 10.3390/nano8100772.
Phase-change electrical probe memory has recently attained considerable attention owing to its profound potential for next-generation mass and archival storage devices. To encourage more talented researchers to enter this field and thereby advance this technology, this paper first introduces approaches to induce the phase transformation of chalcogenide alloy by probe tip, considered as the root of phase-change electrical probe memory. Subsequently the design rule of an optimized architecture of phase-change electrical probe memory is proposed based on a previously developed electrothermal and phase kinetic model, followed by a summary of the state-of-the-art phase-change electrical probe memory and an outlook for its future prospects.
相变电探针存储器因其在下一代大容量和存档存储设备方面的巨大潜力，近来受到了广泛关注。为鼓励更多有才华的研究人员进入该领域并推动这项技术发展，本文首先介绍了通过探针尖端诱导硫族化物合金发生相变的方法，这被视为相变电探针存储器的核心。随后，基于先前开发的电热和相动力学模型，提出了相变电探针存储器优化架构的设计规则，接着总结了相变电探针存储器的最新技术水平，并对其未来前景进行了展望。
