Guo Chenyang, Chen Xing, Ding Song-Yuan, Mayer Dirk, Wang Qingling, Zhao Zhikai, Ni Lifa, Liu Haitao, Lee Takhee, Xu Bingqian, Xiang Dong
Tianjin Key Laboratory of Optoelectronic Sensor and Sensing Network Technology, Key Laboratory of Optical Information Science and Technology, Institute of Modern Optics, College of Electronic Information and Optical Engineering , Nankai University , Tianjin 300071 , China.
Department of Chemistry , The Pennsylvania State University , State College , Pennsylvania 16802 , United States.
ACS Nano. 2018 Nov 27;12(11):11229-11235. doi: 10.1021/acsnano.8b05826. Epub 2018 Oct 18.
One of the promising approaches to meet the urgent demand for further device miniaturization is to create functional devices using single molecules. Although various single-molecule electronic devices have been demonstrated recently, single-molecule optical devices which use external stimulations to control the optical response of a single molecule have rarely been reported. Here, we propose and demonstrate a field-effect Raman scattering (FERS) device with a single molecule, an optical counterpart to field-effect transistors (a key component of modern electronics). With our devices, the gap size between electrodes can be precisely adjusted at subangstrom accuracy to form single molecular junctions as well as to reach the maximum performance of Raman scattering via plasmonic enhancement. Based on this maximum performance, we demonstrated that the intensity of Raman scattering can be further enhanced by an additional ∼40% if the orbitals of the molecules bridged two electrodes were shifted by a gating voltage. This finding not only provides a method to increase the sensitivity of Raman scattering beyond the limit of plasmonic enhancement, but also makes it feasible to realize addressable functional FERS devices with a gate electrode array.
满足对进一步设备小型化的迫切需求的一种有前景的方法是使用单分子制造功能设备。尽管最近已经展示了各种单分子电子设备,但利用外部刺激来控制单个分子光学响应的单分子光学设备却鲜有报道。在此,我们提出并展示了一种具有单个分子的场效应拉曼散射(FERS)设备,它是场效应晶体管(现代电子学的关键组件)的光学对应物。通过我们的设备,电极之间的间隙尺寸可以以亚埃精度精确调整,以形成单分子结,并通过等离子体增强达到拉曼散射的最大性能。基于这种最大性能,我们证明,如果通过门控电压使跨接两个电极的分子轨道发生移动,拉曼散射强度可进一步提高约40%。这一发现不仅提供了一种将拉曼散射灵敏度提高到等离子体增强极限以上的方法,还使得利用栅电极阵列实现可寻址的功能性FERS设备成为可能。