School of Electrical and Electronic Engineering , Yonsei University , 50 Yonsei-ro , Seodaemun-gu, Seoul 120-749 , Republic of Korea.
ACS Appl Mater Interfaces. 2018 Oct 31;10(43):37207-37215. doi: 10.1021/acsami.8b11094. Epub 2018 Oct 19.
A facile fabrication of polymer/metal-oxide hybrid semiconductors is introduced to overcome the intrinsically brittle nature of inorganic metal-oxide semiconductors. The fabrication of the hybrid semiconductors was enabled by plasma polymerization of polytetrafluoroethylene (PTFE) via radio frequency magnetron sputtering process which is highly compatible with metal-oxide semiconductor manufacturing facilities. Indium-gallium-zinc oxide (IGZO) and PTFE are cosputtered to fabricate PTFE-incorporated IGZO thin-film transistors (IGZO:PTFE TFTs) and they exhibit a field-effect mobility of 10.27 cm V s, a subthreshold swing of 0.38 V dec, and an on/off ratio of 1.08 × 10. When compared with conventional IGZO TFTs, the IGZO:PTFE TFTs show improved stability results against various electrical, illumination, thermal, and moisture stresses. Furthermore, the IGZO:PTFE TFTs show stable electrical characteristics with a threshold voltage ( V) shift of 0.89 V after 10 000 tensile bending cycles at a radius of 5 mm.
介绍了一种聚合物/金属氧化物杂化半导体的简易制备方法，以克服无机金属氧化物半导体固有的脆性。通过射频磁控溅射工艺对聚四氟乙烯（PTFE）进行等离子体聚合，实现了杂化半导体的制备，该工艺与金属氧化物半导体制造设备高度兼容。将铟镓锌氧化物（IGZO）和 PTFE 共溅射，制备了 PTFE 掺杂的 IGZO 薄膜晶体管（IGZO:PTFE TFT），其场效应迁移率为 10.27 cm V s，亚阈值摆幅为 0.38 V dec，开关比为 1.08×10。与传统的 IGZO TFT 相比，IGZO:PTFE TFT 在各种电、光照、热和湿度应力下表现出更好的稳定性。此外，IGZO:PTFE TFT 在半径为 5mm 的 10000 次拉伸弯曲循环后，其阈值电压（V）仅漂移了 0.89V，表现出稳定的电特性。
