Hsieh Pei-Lun, Lee An-Ting, Chen Lih-Juann, Huang Michael H
Department of Materials Science and Engineering and Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu, 30013, Taiwan.
Department of Chemistry and Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu, 30013, Taiwan.
Angew Chem Int Ed Engl. 2018 Dec 3;57(49):16162-16165. doi: 10.1002/anie.201809132. Epub 2018 Nov 8.
Electrical conductivity properties of Ge {100}, {110}, {111}, and {211} facets have been measured by breaking Ge (100) and (111) wafers to expose {110} and {211} surfaces and contacting the different facets with tungsten probes. Ge {111} and {211} faces are far more conductive than the already conductive Ge {100} and {110} faces, matching with recent density functional theory (DFT) predictions. Asymmetric I-V curves resembling those of p-n junctions have been collected for the {110}/{111} and {110}/{211} facet combinations. The current-rectifying effects stem from different degrees of surface band bending for the highly and less conductive faces and the direction of current flow. This work demonstrates that germanium wafers also possess facet-dependent electrical conductivity responses that can be utilized in the fabrication of novel fin field-effect transistors (finFET).
通过切割锗（100）和（111）晶圆以暴露出{110}和{211}表面，并使用钨探针接触不同的晶面，对锗{100}、{110}、{111}和{211}晶面的电导率特性进行了测量。锗{111}和{211}面的导电性比已经具有导电性的锗{100}和{110}面高得多，这与最近的密度泛函理论（DFT）预测相符。对于{110}/{111}和{110}/{211}晶面组合，已收集到类似于p-n结的不对称I-V曲线。电流整流效应源于高导电性和低导电性表面不同程度的表面能带弯曲以及电流流动方向。这项工作表明，锗晶圆也具有依赖于晶面的电导率响应，可用于制造新型鳍式场效应晶体管（finFET）。
