Tan Chih-Shan, Chen Ying-Jui, Hsia Chi-Fu, Huang Michael H
Department of Chemistry, National Tsing Hua University, Hsinchu, 30013, Taiwan.
Chem Asian J. 2017 Feb 1;12(3):293-297. doi: 10.1002/asia.201601520. Epub 2017 Jan 10.
Ag O cubes, truncated octahedra, rhombic dodecahedra, and rhombicuboctahedra were synthesized in aqueous solution. Two tungsten probes were brought into contact with a single particle for electrical conductivity measurements. Strongly facet-dependent electrical conductivity behaviors have been observed. The {111} faces are most conductive. The {100} faces are moderately conductive. The {110} faces are nearly non-conductive. When electrodes contacted two different facets of a rhombicuboctahedron, asymmetrical I-V curves were obtained. The {111} and {110} combination gives the best I-V curve expected for a p-n junction with current flowing in one direction through the crystal but not in the opposite direction. Density of states (DOS) plots for varying number of different lattice planes of Ag O match with the experimental results, suggesting that the {111} faces are most electrically conductive. The thicknesses of the thin surface layer responsible for the facet-dependent properties of Ag O crystals have been determined.
在水溶液中合成了氧化银立方体、截角八面体、菱形十二面体和菱形立方八面体。将两个钨探针与单个颗粒接触以进行电导率测量。观察到了强烈的面依赖电导率行为。{111}面导电性最强。{100}面导电性中等。{110}面几乎不导电。当电极接触菱形立方八面体的两个不同面时，获得了不对称的I-V曲线。{111}和{110}的组合给出了p-n结预期的最佳I-V曲线，电流沿一个方向流过晶体，而不会沿相反方向流动。氧化银不同晶格平面数量变化的态密度（DOS）图与实验结果相符，表明{111}面导电性最强。已经确定了导致氧化银晶体面依赖性质的薄表面层的厚度。
