School of Earth and Atmospheric Sciences , Georgia Institute of Technology , Atlanta , Georgia 30332-0340 , United States.
Environ Sci Technol. 2018 Nov 20;52(22):13202-13211. doi: 10.1021/acs.est.8b03993. Epub 2018 Nov 6.
The kinetics and mechanism of thiol oxidation by Mn oxides undergoing dynamic structural transformation under environmentally relevant conditions remain poorly understood. In this study, thiol/disulfide pair concentrations were simultaneously determined in situ using voltammetric microelectrodes during the interaction of four common thiols (cysteine, homocysteine, cysteamine, and glutathione) with fresh and aged δ-MnO at pH 7.0. The reaction kinetics was first order with respect to thiol and zero order with respect to Mn oxides. A transient intermediate sulfur surface species observed during the reaction provides evidence for a mechanism involving two successive one-electron transfer steps. The reaction kinetics of fresh and aged δ-MnO was investigated with cysteine and compared to that of manganite, a Mn(III) oxyhydroxide phase. The reactivity of aged δ-MnO decreased as a result of structural transformation to cryptomelane but remained higher than that of manganite, suggesting the potential roles of transient Mn(III) surface intermediate in promoting the reduction of Mn(IV) in δ-MnO and cryptomelane (compared to Mn(III) in manganite). This study demonstrates the importance of correlating Mn oxide mineral structure and redox reactivity and extends the potential for thiols commonly found in sedimentary environments to be utilized as electron shuttles during dissimilatory Mn reduction.
在环境相关条件下经历动态结构转变的 Mn 氧化物中硫醇氧化的动力学和机制仍未得到很好的理解。在这项研究中,使用伏安微电极在四种常见硫醇(半胱氨酸、同型半胱氨酸、半胱胺和谷胱甘肽)与新鲜和老化的 δ-MnO 在 pH 7.0 下相互作用期间,同时原位确定了硫醇/二硫键对的浓度。反应动力学对硫醇呈一级,对 Mn 氧化物呈零级。反应过程中观察到的瞬态表面硫物种中间体为涉及两个连续单电子转移步骤的机制提供了证据。研究了新鲜和老化的 δ-MnO 与半胱氨酸的反应动力学,并与 Mn(III) 氧氢氧化物相的锰矿进行了比较。由于结构向隐钾锰矿的转变,老化的 δ-MnO 的反应性降低,但仍高于锰矿,这表明瞬态 Mn(III) 表面中间体能促进 δ-MnO 和隐钾锰矿(与锰矿中的 Mn(III) 相比)中 Mn(IV) 的还原。该研究表明将 Mn 氧化物矿物结构与氧化还原反应性相关联的重要性,并扩展了在沉积环境中常见的硫醇作为异化 Mn 还原过程中电子穿梭的潜力。