Sadlo Alexander, Peeters Daniel, Albert Rene, Rogalla Detlef, Becker Hans-Werner, Schmechel Roland, Devi Anjana
Inorganic Materials Chemistry, Faculty of Chemistry and Biochemistry, Ruhr-University Bochum, Universitätsstraβe 150, 44801 Bochum, Germany.
Faculty of Engineering and Center for Nanointegration Duisburg-Essen (CENIDE), University Duisburg-Essen, Carl-Benz-Straβe 199, 47057 Duisburg, Germany.
J Nanosci Nanotechnol. 2019 Feb 1;19(2):867-876. doi: 10.1166/jnn.2019.15739.
Zinc oxide (ZnO) has been recognized as one of the most promising metal oxide semiconductor material for processing low-cost thin film transistors (TFTs). Within the scope of this work, we demonstrate a simple, stabilizer free and very efficient chemical solution deposition (CSD) route to grow high quality ZnO layers. The identification of a highly soluble zinc ketoiminate precursor that undergoes hydrolysis under ambient conditions with the facile cleavage of the ligands was the key to develop a simple and straightforward process for ZnO thin films under mild process conditions. Upon heat treatment at moderate temperatures, the precursor decomposes cleanly yielding polycrystalline ZnO thin films, which was confirmed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The composition was investigated employing complementary techniques such as X-ray photoelectron spectroscopy (XPS) and Rutherford backscattering spectrometry (RBS) which revealed high purity ZnO layers. The functional properties in terms of transparency and optical band gap were determined by ultraviolet-visible (UV-Vis) spectroscopy. The transparent ZnO semiconductor thin films serve as active channel layer of thin film transistors (TFT) which was demonstrated by spin coating of the precursor. Subsequent curing in ambient air, yields a 10 nm film that is sufficient to fabricate working TFTs test structures.
氧化锌（ZnO）被认为是用于制造低成本薄膜晶体管（TFT）最具前景的金属氧化物半导体材料之一。在本工作范围内，我们展示了一种简单、无稳定剂且非常有效的化学溶液沉积（CSD）方法来生长高质量的ZnO层。鉴定出一种在环境条件下会发生水解且配体易于裂解的高可溶性锌酮亚胺前驱体，是在温和工艺条件下开发一种简单直接的ZnO薄膜制备工艺的关键。在适度温度下进行热处理时，前驱体干净地分解，得到多晶ZnO薄膜，这通过X射线衍射（XRD）和扫描电子显微镜（SEM）得到证实。采用X射线光电子能谱（XPS）和卢瑟福背散射光谱（RBS）等互补技术对成分进行了研究，结果显示ZnO层具有高纯度。通过紫外-可见（UV-Vis）光谱确定了透明度和光学带隙方面的功能特性。透明的ZnO半导体薄膜用作薄膜晶体管（TFT）的有源沟道层，这通过旋涂前驱体得到了证明。随后在环境空气中固化，得到了一层10 nm的薄膜，足以制造工作的TFT测试结构。
