Opt Lett. 2018 Nov 1;43(21):5287-5290. doi: 10.1364/OL.43.005287.
Together with III-V InP, chalcopyrite I-III-VI metal chalcogenides particularly with the compositions of A-B-S (A=Cu, Ag, B=In, Ga) are regarded as an emerging non-Cd class for synthesis of visible-emitting colloidal quantum dots (QDs) and the following fabrication of QD-light-emitting diodes (QLEDs). To date, the composition of I-III-VI QDs which were exploited for QLED fabrication remains highly limited, with most devices demonstrated from Cu-In-S-based ones. Herein, we explore the synthesis of two Ga-based I-III-VI QDs of Ag-Ga-S (AGS) and Cu-Ga-S (CGS) QDs and their application to QLED fabrication. Using cyan AGS/ZnS and azure CGS/ZnS core/shell QDs, all-solution-processed, multilayered QLEDs with a hybrid combination of organic hole transport layer and inorganic electron transport layer are fabricated and compared. We observe that CGS QLED by far outperforms in luminance and efficiency its AGS counterpart, which is ascribable to the differences in both electronic band structure and core/shell structure between two comparative QDs.
与 III-V 族的 InP 一起，黄铜矿 I-III-VI 金属硫族化物，特别是具有 A-B-S（A=Cu、Ag、B=In、Ga）组成的材料，被认为是一类新兴的无镉材料，可用于合成可见光发射胶体量子点（QD）和随后的 QD 发光二极管（QLED）的制备。迄今为止，用于 QLED 制备的 I-III-VI QD 的组成仍然高度受限，大多数器件都是基于 Cu-In-S 材料。在此，我们探索了 Ag-Ga-S（AGS）和 Cu-Ga-S（CGS）两种基于 Ga 的 I-III-VI QD 的合成及其在 QLED 制备中的应用。我们使用了蓝绿的 AGS/ZnS 和深蓝的 CGS/ZnS 核/壳 QD，通过全溶液处理方法，制备并比较了具有有机空穴传输层和无机电子传输层的混合组合的多层 QLED。我们观察到 CGS QLED 的亮度和效率远优于其 AGS 对应物，这归因于两种比较 QD 在电子能带结构和核/壳结构方面的差异。
