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用于原位发光传感Al/AlN多层涂层健康状况的溅射AlN:Er薄膜的衬底温度依赖性特性

Substrate Temperature Dependent Properties of Sputtered AlN:Er Thin Film for In-Situ Luminescence Sensing of Al/AlN Multilayer Coating Health.

作者信息

Fang Liping, Jiang Yidong, Zhu Shengfa, Ding Jingjing, Zhang Dongxu, Yin Anyi, Chen Piheng

机构信息

Institute of Materials, China Academy of Engineering Physics, Mianyang 621700, China.

出版信息

Materials (Basel). 2018 Nov 6;11(11):2196. doi: 10.3390/ma11112196.

DOI:10.3390/ma11112196
PMID:30404205
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6266760/
Abstract

The integrity and reliability of surface protective coatings deposited on metal surface could be in-situ monitored via the attractive luminescence sensing technique. In this paper, we report the influence of substrate temperature on the properties of erbium (Er) doped aluminum nitride (AlN) film, which could be applied as a luminescent layer for monitoring the health of multilayered Al/AlN coating. The AlN:Er films were deposited via reactive radio-frequency magnetron sputtering, and the silicon substrate temperature was varied from non-intentional heating up to 400 °C. The composition, morphology, crystalline structure, and dielectric function of the AlN:Er films deposited under these different substrate temperature conditions were studied. These properties of the AlN:Er films show strong correlation with the substrate temperature maintained during film fabrication. The obtained AlN:Er films, without further annealing, exhibited photoluminescence peaks of the Er ions in the visible wavelength range and the strongest photoluminescence intensity was observed for the AlN:Er film deposited with the temperature of substrate kept at 300 °C. The results demonstrated in this work offer guidance to optimize the substrate temperature for the deposition of AlN:Er film for future application of this sensing technique to thin metal components.

摘要

通过引人注目的发光传感技术，可以原位监测沉积在金属表面的表面保护涂层的完整性和可靠性。在本文中，我们报告了衬底温度对掺铒（Er）氮化铝（AlN）薄膜性能的影响，该薄膜可用作监测多层Al/AlN涂层健康状况的发光层。通过反应射频磁控溅射沉积AlN:Er薄膜，硅衬底温度从非故意加热到400°C变化。研究了在这些不同衬底温度条件下沉积的AlN:Er薄膜的成分、形貌、晶体结构和介电函数。AlN:Er薄膜的这些性能与薄膜制备过程中保持的衬底温度密切相关。所获得的AlN:Er薄膜无需进一步退火，在可见光波长范围内呈现出Er离子的光致发光峰，并且对于衬底温度保持在300°C沉积的AlN:Er薄膜，观察到最强的光致发光强度。这项工作中展示的结果为优化AlN:Er薄膜沉积的衬底温度提供了指导，以便该传感技术未来应用于薄金属部件。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e9c2/6266760/df721efa3111/materials-11-02196-g013.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e9c2/6266760/e7f6f0485033/materials-11-02196-g008.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e9c2/6266760/df721efa3111/materials-11-02196-g013.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e9c2/6266760/e7f6f0485033/materials-11-02196-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e9c2/6266760/680582b942f7/materials-11-02196-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e9c2/6266760/330dfcc34098/materials-11-02196-g010.jpg
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