石墨烯纳米机电开关的三维有限元模拟

3D Finite Element Simulation of Graphene Nano-Electro-Mechanical Switches.

作者信息

Kulothungan Jothiramalingam, Muruganathan Manoharan, Mizuta Hiroshi

机构信息

School of Materials Science, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa 923-1292, Japan.

Nanoelectronics and Nanotechnologies Research Group, Faculty of Physical Sciences and Engineering, University of Southampton, Highfield, Southampton SO17 1BJ, UK.

出版信息

Micromachines (Basel). 2016 Aug 15;7(8):143. doi: 10.3390/mi7080143.

DOI:10.3390/mi7080143

PMID:30404315

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6189816/

Abstract

In this paper, we report the finite element method (FEM) simulation of double-clamped graphene nanoelectromechanical (NEM) switches. Pull-in and pull-out characteristics are analyzed for graphene NEM switches with different dimensions and these are consistent with the experimental results. This numerical model is used to study the scaling nature of the graphene NEM switches. We show the possibility of achieving a pull-in voltage as low as 2 V for a 1.5-μm-long and 3-nm-thick nanocrystalline graphene beam NEM switch. In order to study the mechanical reliability of the graphene NEM switches, von Mises stress analysis is carried out. This analysis shows that a thinner graphene beam results in a lower von Mises stress. Moreover, a strong electrostatic force at the beam edges leads to a mechanical deflection at the edges larger than that around the center of the beam, which is consistent with the von Mises stress analysis.

摘要

在本文中，我们报告了双端夹紧石墨烯纳米机电（NEM）开关的有限元方法（FEM）模拟。对不同尺寸的石墨烯NEM开关的拉入和拉出特性进行了分析，这些特性与实验结果一致。该数值模型用于研究石墨烯NEM开关的缩放特性。我们展示了对于一个1.5μm长、3nm厚的纳米晶石墨烯梁NEM开关，实现低至2V的拉入电压的可能性。为了研究石墨烯NEM开关的机械可靠性，进行了冯·米塞斯应力分析。该分析表明，较薄的石墨烯梁会导致较低的冯·米塞斯应力。此外，梁边缘处强大的静电力会导致边缘处的机械挠度大于梁中心周围的挠度，这与冯·米塞斯应力分析一致。