Sun Jian, Schmidt Marek E, Muruganathan Manoharan, Chong Harold M H, Mizuta Hiroshi
School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1211, Japan.
Nanoelectronics and Nanotechnologies Research Group, University of Southampton, Southampton, SO17 1BJ, UK.
Nanoscale. 2016 Mar 28;8(12):6659-65. doi: 10.1039/c6nr00253f.
The direct growth of graphene on insulating substrate is highly desirable for the commercial scale integration of graphene due to the potential lower cost and better process control. We report a simple, direct deposition of nanocrystalline graphene (NCG) on insulating substrates via catalyst-free plasma-enhanced chemical vapor deposition at relatively low temperature of ∼800 °C. The parametric study of the process conditions that we conducted reveals the deposition mechanism and allows us to grow high quality films. Based on such film, we demonstrate the fabrication of a large-scale array of nanoelectromechanical (NEM) switches using regular thin film process techniques, with no transfer required. Thanks to ultra-low thickness, good uniformity, and high Young's modulus of ∼0.86 TPa, NCG is considered as a promising material for high performance NEM devices. The high performance is highlighted for the NCG switches, e.g. low pull-in voltage <3 V, reversible operations, minimal leakage current of ∼1 pA, and high on/off ratio of ∼10(5).
由于潜在的低成本和更好的工艺控制，石墨烯在绝缘衬底上的直接生长对于石墨烯的商业规模集成非常有吸引力。我们报道了一种通过在约800°C的相对低温下进行无催化剂等离子体增强化学气相沉积，在绝缘衬底上简单、直接地沉积纳米晶石墨烯（NCG）的方法。我们对工艺条件进行的参数研究揭示了沉积机制，并使我们能够生长高质量的薄膜。基于这种薄膜，我们展示了使用常规薄膜工艺技术制造大规模纳米机电（NEM）开关阵列，无需转移。由于超低厚度、良好的均匀性和约0.86TPa的高杨氏模量，NCG被认为是用于高性能NEM器件的有前途的材料。NCG开关的高性能得到了突出体现，例如低吸合电压<3V、可逆操作、约1pA的最小泄漏电流和约10(5)的高开关比。
