Department of Electrical Engineering, KAIST, Yuseong-gu, Daejeon, Republic of Korea.
Nano Lett. 2011 Feb 9;11(2):854-9. doi: 10.1021/nl104212e. Epub 2011 Jan 21.
Through the fusion of electrostatics and mechanical dynamics, we demonstrate a transformable silicon nanowire (SiNW) field effect transistor (FET) through a wafer-scale top-down approach. By felicitously taking advantage of the proposed electrostatic SiNW-FET with mechanically movable SiNWs, all essential logic gates, including address decoders, can be monolithically integrated into a single device. The unification of various functional devices, such as pn-diodes, FETs, logic gates, and address decoders, can therefore eliminate the complex fabrication issues associated with nanoscale integration. These results represent a step toward the creation of multifunctional and flexible nanoelectronics.
通过静电学和机械动力学的融合，我们采用晶圆级的自上而下方法展示了一种可变形的硅纳米线（SiNW）场效应晶体管（FET）。通过巧妙地利用具有可移动 SiNW 的静电 SiNW-FET，所有基本逻辑门，包括地址解码器，都可以单片集成到单个器件中。因此，pn 二极管、FET、逻辑门和地址解码器等各种功能器件的统一可以消除与纳米级集成相关的复杂制造问题。这些结果代表朝着创建多功能和灵活的纳米电子学迈出了一步。
