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通过高深度和超高深度二代测序在一名半侧巨脑症和耐药性癫痫患者中鉴定RHEB基因的体细胞突变。

Identification of a somatic mutation in the RHEB gene through high depth and ultra-high depth next generation sequencing in a patient with Hemimegalencephaly and drug resistant Epilepsy.

作者信息

Salinas Valeria, Vega Patricia, Piccirilli María Victoria, Chicco Carla, Ciraolo Carlos, Christiansen Silvia, Consalvo Damián, Perez-Maturo Josefina, Medina Nancy, González-Morón Dolores, Novaro Virginia, Perrone Cecilia, García María Del Carmen, Agosta Guillermo, Silva Walter, Kauffman Marcelo

机构信息

Consultorio y Laboratorio de Neurogenética, Centro Universitario de Neurología y División Neurología, Hospital José María Ramos Mejía, Facultad de Medicina, Universidad de Buenos Aires, Buenos Aires, Argentina; Programa de Medicina de Precisión y Genómica Clínica, Instituto de Investigaciones en Medicina Traslacional, Facultad de Ciencias Biomédicas, Universidad Austral-CONICET, Buenos Aires, Argentina.

Consultorio y Laboratorio de Neurogenética, Centro Universitario de Neurología y División Neurología, Hospital José María Ramos Mejía, Facultad de Medicina, Universidad de Buenos Aires, Buenos Aires, Argentina; Servicio de Neurología Infantil, Hospital Italiano de Buenos Aires, Buenos Aires, Argentina.

出版信息

Eur J Med Genet. 2019 Nov;62(11):103571. doi: 10.1016/j.ejmg.2018.11.005. Epub 2018 Nov 8.

DOI:
10.1016/j.ejmg.2018.11.005
PMID:30414531
Abstract

Malformations of cortical development are a frequent cause of drug-resistant Epilepsy and developmental delay. Hemimegalencephaly is a Malformation of cortical development characterized by enlargement of all or a part of one cerebral hemisphere. Germline and somatic mutation in genes belonging to the Mammalian Target of Rapamycin (mTOR) pathway has been identified in patients suffering from epilepsy secondary to Hemimegalencephaly and focal cortical dysplasia. We present here a patient suffering from severe neonatal Epilepsy since 3 h of life secondary to Hemimegalencephaly, requiring an anatomic hemispherectomy surgical procedure for seizure control, where by means of next-generation sequencing at an ultra-high depth coverage, we were able to identify a novel somatic mutation in the RHEB gene (NM_005614: c.119A > T: p. Glu40Val). The histopathological diagnosis was Cortical Dysplasia type IIB determined by the presence of dysmorphic neurons of variable size with nuclear alteration and balloon cells in the context of Hemimegalencephaly, which are similar to that have been demonstrated in hyperactivating RHEB models. This is the first report of a somatic mutation in RHEB gene in a patient suffering from Epilepsy secondary to Hemimegalencephaly. It highlights different current topics in the fields of genetics of Malformations of cortical development: a-somatic mosaicism is not uncommon in these neurodevelopmental disorders; b-the molecular diagnostic approach should involve the use of state-of-the-art methods and the sampling of different tissues; c-new findings might facilitate therapeutics discoveries while providing an improved understanding of normal brain development.

摘要

皮质发育畸形是耐药性癫痫和发育迟缓的常见原因。半侧巨脑畸形是一种皮质发育畸形,其特征是一个大脑半球的全部或部分增大。在继发于半侧巨脑畸形和局灶性皮质发育异常的癫痫患者中,已鉴定出哺乳动物雷帕霉素靶蛋白(mTOR)通路相关基因的种系和体细胞突变。我们在此报告一名自出生3小时起就患有严重新生儿癫痫的患者,继发于半侧巨脑畸形,需要进行解剖性大脑半球切除术以控制癫痫发作。通过超深度覆盖的新一代测序,我们能够在RHEB基因(NM_005614:c.119A>T:p.Glu40Val)中鉴定出一种新的体细胞突变。组织病理学诊断为IIB型皮质发育异常,由半侧巨脑畸形背景下大小可变的畸形神经元伴核改变和气球样细胞的存在所确定,这与RHEB过度激活模型中所显示的情况相似。这是第一例继发于半侧巨脑畸形的癫痫患者中RHEB基因体细胞突变的报告。它突出了皮质发育畸形遗传学领域当前的不同主题:a-体细胞镶嵌现象在这些神经发育障碍中并不罕见;b-分子诊断方法应包括使用最先进的方法和对不同组织进行采样;c-新发现可能有助于治疗方法的发现,同时增进对正常脑发育的理解。

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